High-efficiency and stable quantum dot light-emitting diodes with staircase V2O5/PEDOT:PSS hole injection layer interface barrier

2020 ◽  
Vol 78 ◽  
pp. 105589
Author(s):  
Xiaohong Jiang ◽  
Yuting Ma ◽  
Yu Tian ◽  
Anzhen Wang ◽  
Aqiang Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Layer Interface ◽  
Interface Barrier ◽  
Stable Quantum

scholarly journals Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Good Alternative ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Long Term Stability ◽  
Stable Quantum ◽  
Poly Styrene Sulfonate

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

P‐type Sb‐doped Cu 2 O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS‐Free Quantum Dot Light Emitting Diodes

2019 ◽  
Vol 216 (11) ◽  
pp. 1900004 ◽  
Author(s):  
Hyeong‐Jin Seo ◽  
Ji‐Eun Lee ◽  
Su Been Heo ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Ito Electrode ◽  
P Type

Design of the Hole-Injection/Hole-Transport Interfaces for Stable Quantum-Dot Light-Emitting Diodes

2020 ◽  
Vol 11 (12) ◽  
pp. 4649-4654 ◽  
Author(s):  
Yuxun Ye ◽  
Xuerong Zheng ◽  
Desui Chen ◽  
Yunzhou Deng ◽  
Dong Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Hole Injection ◽  
Injection Hole ◽  
Light Emitting ◽  
Stable Quantum

scholarly journals Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Turn On ◽  
Injection Material

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

A solution-processable inorganic hole injection layer that improves the performance of quantum-dot light-emitting diodes

2017 ◽  
Vol 17 (4) ◽  
pp. 442-447 ◽  
Author(s):  
Sang Moo Lee ◽  
Dongguen Shin ◽  
Nam-Kwang Cho ◽  
Yeonjin Yi ◽  
Seong Jun Kang
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Solution Processable
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