scholarly journals Impact of proton-induced transmutation doping in semiconductors for space applications

2019 ◽  
Vol 7 (29) ◽  
pp. 8905-8914 ◽  
Author(s):  
Julie V. Logan ◽  
Michael P. Short ◽  
Preston T. Webster ◽  
Christian P. Morath ◽  
Elizabeth H. Steenbergen
Keyword(s):  
Proton Irradiation ◽  
Device Performance ◽  
Space Applications ◽  
Transmutation Doping

Proton irradiation typical of detector lifetime in orbit does not change semiconductor chemistry sufficiently through transmutation to alter device performance.

CIGS Solar Cells for Outer Planetary Space Applications: the Effect of Proton Irradiation

2020 ◽  
Author(s):  
Hadi Afshari ◽  
Brandon K Durant ◽  
Khalid Hossain ◽  
Dmitry Poplavskyy ◽  
Bibhudutta Rout ◽  
...  
Keyword(s):  
Solar Cells ◽  
Proton Irradiation ◽  
Space Applications ◽  
Cigs Solar Cells

scholarly journals Effect of high energy proton irradiation on MAPbI3 films for space applications observed by micro-Raman spectroscopy

2020 ◽  
Vol 1 (6) ◽  
pp. 2068-2073
Author(s):  
Walter O. Herrera Martínez ◽  
Paula Giudici ◽  
Natalia B. Correa Guerrero ◽  
M. Luján Ibarra ◽  
M. Dolores Perez
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Space Applications ◽  
Micro Raman Spectroscopy ◽  
Energy Proton

10 MeV proton irradiation of a MAPbI3 thin film causes PbO formation when the surface is exposed to an O2 atmosphere.

scholarly journals Potential for neutron and proton transmutation doping of GaN and Ga2O3

2020 ◽  
Vol 1 (1) ◽  
pp. 45-53
Author(s):  
Julie V. Logan ◽  
Elias B. Frantz ◽  
Lilian K. Casias ◽  
Michael P. Short ◽  
Christian P. Morath ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton ◽  
Transmutation Doping ◽  
P Type

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

Lattice Defects in Si1-xGex Devices by Proton Irradiation and their Effect on Device Performance

1997 ◽  
Vol 57-58 ◽  
pp. 239-244 ◽  
Author(s):  
H. Ohyama ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Jan Vanhellemont ◽  
Y. Takami ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Lattice Defects ◽  
Device Performance

Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

2011 ◽  
Vol 679-680 ◽  
pp. 551-554
Author(s):  
D. Kurt Gaskill ◽  
Jun Hu ◽  
X. Xin ◽  
Jian Hui Zhao ◽  
Brenda L. VanMil ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Chemical Vapor ◽  
Single Photon Detection ◽  
Proton Radiation ◽  
Space Applications ◽  
Single Photon Counting ◽  
Avalanche Diodes

The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the band gap after irradiation. For threshold voltage ranging from 23 to 26 mV, the 4H-SiC SPAD showed low DCR (<54 kHz) and high SPDE (>1%) after irradiation. The SPADs demonstrated proton radiation tolerance for geosynchronous space applications.

Proton Irradiation Tolerance of High-Efficiency Perovskite Absorbers for Space Applications

2019 ◽  
Vol 10 (22) ◽  
pp. 6990-6995 ◽  
Author(s):  
Shusaku Kanaya ◽  
Gyu Min Kim ◽  
Masashi Ikegami ◽  
Tsutomu Miyasaka ◽  
Kohtaku Suzuki ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Efficiency ◽  
Space Applications
Sign in / Sign up

Export Citation Format

Share Document