Chemical understanding of resistance drift suppression in Ge–Sn–Te phase-change memory materials
The degree of Peierls distortion and the fraction of tetrahedral units in amorphous Ge–Sn–Te phase-change memory materials are gradually reduced as the Sn content gets richer.
2014 ◽
Vol E97.C
(4)
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pp. 351-359
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2011 ◽
Vol 34
(11)
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pp. 2114-2120
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2016 ◽
Vol 49
(2)
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pp. 18-26
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