Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

CrystEngComm ◽  
2020 ◽  
Vol 22 (19) ◽  
pp. 3309-3321 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Yusnizam Yusuf ◽  
Afiq Anuar ◽  
Mohamad Raqif Mahat ◽  
Narong Chanlek ◽  
...  
Keyword(s):  
Free Surface ◽  
Sapphire Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical Vapour Deposition ◽  
Pulsed Atomic Layer Epitaxy ◽  
Atomically Flat ◽  
Metalorganic Chemical

An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition.

Liquid injection MOCVD and ALD studies of “single source” Sr-Nb and Sr-Ta precursors

2003 ◽  
Vol 784 ◽  
Author(s):  
Richard J. Potter ◽  
Paul A. Marshall ◽  
John L. Roberts ◽  
Anthony C. Jones ◽  
Paul R. Chalker ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Single Source ◽  
Layer Deposition ◽  
Liquid Injection ◽  
Metalorganic Chemical Vapour Deposition ◽  
Decomposition Behaviour ◽  
Alkoxide Precursors ◽  
Metalorganic Chemical

ABSTRACTA range of “single source” Sr-Nb and Sr-Ta heterometal alkoxides precursors are investigated as potential sources for liquid injection MOCVD (metalorganic chemical vapour deposition) and ALD (atomic layer deposition) of SrBi2Ta2O9 (SBT) and SrBi2(TxNb1-x)2O9 (SBTN). These “single source” precursors are designed to alleviate the mis-match between conventional Sr and Ta or Sr and Nb sources. Strontium-tantalate and strontium-niobate thin films were deposited on silicon using the “single source” alkoxide precursors [Sr{Ta(OEt)5(dmae}2] and [Sr{Nb(OEt)5(dmae)}2] (dmae = OCH2CH2NMe2), and the optimum temperatures for deposition of stoichiometric SrTa2O6 and SrNb2O6 were determined. Separate ALD studies of [Sr{Ta(OEt)5(dmae)}2] and [Sr{Ta(OEt)5(mee)}2] (mee = OCH2CH2OMe) for the growth of strontium-tantalate were carried out to assess precursor suitability for this technique. Liquid injection MOCVD of Bi-oxide films using Bi(mmp)3 indicates similar decomposition behaviour to the Sr-Ta and Sr-Nb alkoxides, demonstrating its suitability as a complementary source of Bi for SBT, SBN and SBTN.

Complementary self-aligned laser by metalorganic chemical vapour deposition

1985 ◽  
Vol 21 (20) ◽  
pp. 903 ◽  
Author(s):  
L.J. Mawst ◽  
G. Costrini ◽  
C.A. Zmudzinski ◽  
M.E. Givens ◽  
M.A. Emanuel ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition

1989 ◽  
Vol 25 (22) ◽  
pp. 1496 ◽  
Author(s):  
B. Jalali ◽  
R.N. Nottenburg ◽  
W.S. Hobson ◽  
Y.K. Chen ◽  
T. Fullowan ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Bipolar Transistors ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical
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