A first-principles study of the switching mechanism in GeTe/InSbTe superlattices
Keyword(s):
Via density functional theory calculations, we devise a novel strain-engineered GeTe3/In3SbTe2 superlattice to reduce the power consumption of interfacial phase change memories.
2016 ◽
Vol 4
(42)
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pp. 10082-10089
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2014 ◽
Vol 16
(47)
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pp. 26176-26183
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2019 ◽
Vol 21
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pp. 15001-15006
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2017 ◽
Vol 19
(43)
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pp. 29278-29286
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