Bidirectional tuning of phase transition properties in Pt : VO2 nanocomposite thin films

Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17886-17894
Author(s):  
Zihao He ◽  
Jie Jian ◽  
Shikhar Misra ◽  
Xingyao Gao ◽  
Xuejing Wang ◽  
...  

Pt : VO2 nanocomposite design to achieve bidirectional tuning of phase transformation via size dependent work function of nanoparticles.

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.


Author(s):  
Zhaoqi Hou ◽  
Peng Zhang ◽  
Kai Wu ◽  
Yaqiang Wang ◽  
Gang Liu ◽  
...  

2017 ◽  
Author(s):  
U. V. Patil ◽  
Niranjan S. Ramgir ◽  
A. Bhogale ◽  
A. K. Debnath ◽  
K. P. Muthe ◽  
...  

2012 ◽  
Vol 112 (6) ◽  
pp. 063907 ◽  
Author(s):  
Yongmei Zhang ◽  
Xiaohong Li ◽  
Jingjing Jing ◽  
Wenpeng Song ◽  
Yang Li ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1288
Author(s):  
José Julio Gutiérrez Moreno ◽  
Nikolaos T. Panagiotopoulos ◽  
Georgios A. Evangelakis ◽  
Christina E. Lekka

We present results on thin Ti-Nb-based films containing Hf at various concentrations grown by magnetron sputtering. The films exhibit α” patterns at Hf concentrations up to 11 at.%, while at 16 at.% Hf, the β-phase emerges as a stable structure. These findings were consolidated by ab initio calculations, according to which the α”–β transformation is manifested in the calculation of the electronic band energies for Hf contents between 11 and 18 at.%. It turns out that the β-phase transition originates from the Hf 5d contributions at the Fermi level and the Hf 6s hybridizations at low energies in the electronic density of states. Bonding–anti-bonding first neighbor features existing in the shifted plane destabilize the α″-phase, especially at high Hf concentrations, while the covalent-like features in the first neighborhood stabilize the corresponding plane of the β-phase. Thin films measurements and bulk total energy calculations agree that the lattice constants of both α″ and β phases increase upon Hf substitution. These results are important for the understanding of β-Ti-based alloys formation mechanisms and can be used for the design of suitable biocompatible materials.


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