High-efficiency quantum dots light-emitting diodes based on Li-doped TiO2 nanoparticles as an alternative electron transport layer

Nanoscale ◽  
2021 ◽  
Author(s):  
Moonbon Kim ◽  
Nayeon Lee ◽  
JoongHwan Yang ◽  
Chang Wook Han ◽  
Hyun-Min Kim ◽  
...  

We report high-efficiency quantum dot light-emitting diodes (QLEDs) with Li-doped TiO2 nanoparticles (NPs) as an alternative electron transport layer (ETL). Colloidally stable TiO2 NPs are applied as ETLs of the...

2021 ◽  
Vol 59 (7) ◽  
pp. 476-480
Author(s):  
Moonbon Kim ◽  
Jiwan Kim

We report highly efficient and robust quantum dot light-emitting diodes (QLEDs) with Li-doped TiO2 nanoparticles (NPs) as an electron transport layer (ETL). As core materials, ZnO-based inorganic NPs can enhance the performance of QLEDs due to their suitable energy level and solution processability. However, their fast electron mobility and instability in organic solvents are two main obstacles to practical display applications. The colloidal stability of TiO2 NPs in ethanol was confirmed after three day-storage, while ZnO NPs showed severe agglomeration. Inverted structure QLEDs using 3% Li-doped TiO2 NP were successfully fabricated and their optical/electrical properties were investigated. With 3% Li-doped TiO2 NPs, the charge balance in the emitting layer of the QLEDs was improved, which resulted in a maximum luminance of 159,840 cd/m2 and external quantum efficiency (EQE) of 9.12%. These results were comparable to the performance of QLEDs with commonly used ZnO NPs. Moreover, the QLEDs with the Li-doped TiO2 NPs showed more stable characteristics than those with ZnO NPs after 7 days in ambient conditions. The EQE of the QLEDs with Li-doped TiO2 NPs was reduced by only 4.9%. These results indicate that Li-doped TiO2 NPs show great promise for use as a solution based inorganic ETL for QLEDs.


2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Wei-Chih Chao ◽  
Tzu-Hsuan Chiang ◽  
Yi-Chun Liu ◽  
Zhi-Xuan Huang ◽  
Chia-Chun Liao ◽  
...  

AbstractThe industrialization of quantum dot light-emitting diodes (QLEDs) requires the use of less hazardous cadmium-free quantum dots, among which ZnSe-based blue and InP-based green and red quantum dots have received considerable attention. In comparison, the development of InP-based green QLEDs is lagging behind. Here, we prepare green InP/ZnSe/ZnS quantum dots with a diameter of 8.6 nm. We then modify the InP quantum dot emitting layer by passivation with various alkyl diamines and zinc halides, which decreases electron mobility and enhances hole transport. This, together with optimizing the electron transport layer, leads to green 545 nm InP QLEDs with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency 57.5 cd/A. EQE approaches the theoretical limit of InP quantum dots, with an emission quantum yield of 86%.


2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.


Small ◽  
2017 ◽  
Vol 13 (13) ◽  
pp. 1603962 ◽  
Author(s):  
Hung Chia Wang ◽  
Heng Zhang ◽  
Hao Yue Chen ◽  
Han Cheng Yeh ◽  
Mei Rurng Tseng ◽  
...  

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