Solvent manipulation of the pre-reduction metal–ligand complex and particle-ligand binding for controlled synthesis of Pd nanoparticles

Boron doped diamond generator-detector electrodes can both change and monitor the binding state of the pH sensitive metal–ligand complex [Cu2+:TETA] by locally varying pH and measuring the free metal concentration.

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Nucleation and growth rates of homogeneously condensing water vapor in argon from shock tube experiments

Experiments in Fluids ◽

10.1007/bf00187403 ◽

1989 ◽

Vol 7 (8) ◽

pp. 521-530 ◽

Cited By ~ 48

Author(s):

F. Peters ◽

B. Paikert

Keyword(s):

Water Vapor ◽

Shock Tube ◽

Growth Rates ◽

Nucleation And Growth

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Impact of Surface Adsorption on Metal–Ligand Binding of Phenanthrolines

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.1c04509 ◽

2021 ◽

Author(s):

Johnson Dalmieda ◽

Ana Zubiarrain-Laserna ◽

Dipankar Saha ◽

Ponnambalam Ravi Selvaganapathy ◽

Peter Kruse

Keyword(s):

Ligand Binding ◽

Surface Adsorption ◽

Metal Ligand

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Morphology Control of Ni(II)-NTA-End-Functionalized Block Copolymer and Bio-Conjugation through Metal-Ligand Complex

Polymers ◽

10.3390/polym9040144 ◽

2017 ◽

Vol 9 (12) ◽

pp. 144 ◽

Cited By ~ 1

Author(s):

Dasom Park ◽

Chaeyeon Lee ◽

Minsu Chae ◽

Mohammad Kadir ◽

Ji Choi ◽

...

Keyword(s):

Block Copolymer ◽

Morphology Control ◽

Ligand Complex ◽

Metal Ligand

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Development of the Grain Size Distribution During the Crystallization of an Amorphous Solid

MRS Proceedings ◽

10.1557/opl.2011.506 ◽

2011 ◽

Vol 1308 ◽

Author(s):

Andreas Bill ◽

Ralf B. Bergmann

Keyword(s):

Grain Size ◽

Size Distribution ◽

Grain Size Distribution ◽

Growth Rates ◽

Amorphous Solid ◽

Amorphous Solids ◽

Nucleation And Growth ◽

Analytic Description ◽

Silicon Thin Films ◽

Random Nucleation

ABSTRACTWe present an overview of the theory developed over the last few years to describe the crystallization of amorphous solids. The microstructure of the crystallizing solid is described in terms of the grain size distribution (GSD). We propose a partial differential equation that captures the physics of crystallization in random nucleation and growth processes. The analytic description is derived for isotropic and anisotropic growth rates and allows for the analysis of different stages of crystallization, from early to full crystallization. We show how the timedependence of effective nucleation and growth rates affect the final distribution. In particular, we demonstrate that for cases described by the Kolmogorov-Avrami-Mehl-Johnson (KAMJ) model applicable to a large class of crystallization processes a lognormal type distribution is obtained at full crystallization. The application of the theory to the crystallization of silicon thin films is discussed.

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