Nucleation and growth rates of homogeneously condensing water vapor in argon from shock tube experiments

1989 ◽  
Vol 7 (8) ◽  
pp. 521-530 ◽  
Author(s):  
F. Peters ◽  
B. Paikert
2011 ◽  
Vol 1308 ◽  
Author(s):  
Andreas Bill ◽  
Ralf B. Bergmann

ABSTRACTWe present an overview of the theory developed over the last few years to describe the crystallization of amorphous solids. The microstructure of the crystallizing solid is described in terms of the grain size distribution (GSD). We propose a partial differential equation that captures the physics of crystallization in random nucleation and growth processes. The analytic description is derived for isotropic and anisotropic growth rates and allows for the analysis of different stages of crystallization, from early to full crystallization. We show how the timedependence of effective nucleation and growth rates affect the final distribution. In particular, we demonstrate that for cases described by the Kolmogorov-Avrami-Mehl-Johnson (KAMJ) model applicable to a large class of crystallization processes a lognormal type distribution is obtained at full crystallization. The application of the theory to the crystallization of silicon thin films is discussed.


1992 ◽  
Vol 7 (2) ◽  
pp. 444-449 ◽  
Author(s):  
Zdenek Hrabe ◽  
Sridhar Komarneni ◽  
Ladislav Pach ◽  
Rustum Roy

Boehmite compacts and boehmite gels (seeded and unseeded) were annealed at various temperatures in nitrogen and 1 atm water vapor to determine the influence of water vapor on boehmite transformation to new phases, changes in porosity, and morphology. Water vapor was found to accelerate the phase transformations markedly compared to dry N2 treatment. The catalyzing effect of water vapor may be due to its interactions on grain surfaces and generation of fast diffusion paths, resulting in nucleation and growth of new phases. This result shows that control of the furnace atmosphere is a useful variable in thermally activated processes.


Nanoscale ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 206-217
Author(s):  
Wenhui Li ◽  
Michael G. Taylor ◽  
Dylan Bayerl ◽  
Saeed Mozaffari ◽  
Mudit Dixit ◽  
...  

Understanding how to control the nucleation and growth rates is crucial for designing nanoparticles with specific sizes and shapes.


2000 ◽  
Vol 612 ◽  
Author(s):  
Daewon Yang ◽  
Jongwon Hong ◽  
Timothy S. Cale

AbstractIn this paper, we describe an experimental study of the nucleation and growth stages during Cu(TMVS)(hfac) sourced Cu CVD on TaN substrates. In particular, we have investigated the effects of water vapor as a co-reactant on evolving surface morphology. The results of short (less than 10 s) depositions without/with water vapor indicate that water vapor helps to reduce the incubation time and to enhance the nuclei formation, uniformity, and adhesion (based on AFM analysis). Introducing water vapor during only the initial stage of deposition results in lower roughnesses, larger grain sizes, and lower short-range roughnesses as compared to the films deposited without water vapor. From this study, we conclude that water vapor enhances Cu nucleation and that a relatively small amount of water vapor before or during the initial stage of deposition improves surface morphology in terms of roughness and grain size.


2008 ◽  
Vol 41 (23) ◽  
pp. 9214-9223 ◽  
Author(s):  
I. Coccorullo ◽  
R. Pantani ◽  
G. Titomanlio

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