scholarly journals Massive red shift of Ce3+ in Y3Al5O12 incorporating super-high content of Ce

RSC Advances ◽  
2020 ◽  
Vol 10 (21) ◽  
pp. 12535-12546 ◽  
Author(s):  
Hitomi Nakamura ◽  
Kenji Shinozaki ◽  
Toyoki Okumura ◽  
Katsuhiro Nomura ◽  
Tomoko Akai
Keyword(s):  
Light Emitting Diodes ◽  
Red Shift ◽  
Light Emitting ◽  
Yellow Phosphor

In light emitting diodes, Y3Al5O12:Ce (YAG:Ce) is used as a yellow phosphor in combination with blue LEDs but lacks a red component in emission.

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

Reduced Working Temperature of Quantum Dots-Light-Emitting Diodes Optimized by QDs@Silica-on-Chip Structure

2018 ◽  
Author(s):  
Bin Xie ◽  
Haochen Liu ◽  
Xiao Wei Sun ◽  
Xingjian Yu ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Temperature Stability ◽  
Phosphor Layer ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
Working Temperature ◽  
On Chip ◽  
White Light Emitting Diodes ◽  
Color Rendering

White light-emitting diodes (WLEDs) composed of blue LED chip, yellow phosphor, and red quantum dots (QDs) are considered as a potential alternative for next-generation artificial light source with their high luminous efficiency (LE) and color-rendering index (CRI). While, QDs’ poor temperature stability and the incompatibility of QDs/silicone severely hinder the wide utilization of QDs-WLEDs. To relieve this, here we proposed a separated QSNs/phosphor structure, which composed of a QSNs-on-chip layer with a yellow phosphor layer above. A silica shell was coated onto the QDs surface to solve the compatibility problem between QDs and silicone. With CRI > 92 and R9 > 90, the newly proposed QDs@silica nanoparticles (QSNs) based WLEDs present 16.7 % higher LE and lower QDs working temperature over conventional mixed type WLEDs. The reduction of QDs’ temperature can reach 11.5 °C, 21.3 °C and 30.3 °C at driving current of 80 mA, 200 mA and 300 mA, respectively.

Luminescence Characteristics of Mg2+·Ba2+Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes

2007 ◽  
Vol 44 (3) ◽  
pp. 147-151 ◽  
Author(s):  
Kyoung-Jae Choi ◽  
Soon-Duk Jee ◽  
Chang-Hae Kim ◽  
Sang-Hyuk Lee ◽  
Ho-Kun Kim
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
Luminescence Characteristics ◽  
Co Doped

Red-shift of vanadate band-gap by cation substitution for application in phosphor-converted white light-emitting diodes

2014 ◽  
Vol 104 (18) ◽  
pp. 181904 ◽  
Author(s):  
XianTao Wei ◽  
Jun Wen ◽  
Shuo Li ◽  
Shan Huang ◽  
Jun Cheng ◽  
...  
Keyword(s):  
Band Gap ◽  
White Light ◽  
Light Emitting Diodes ◽  
Red Shift ◽  
Cation Substitution ◽  
Light Emitting ◽  
White Light Emitting Diodes

Eu2+-doped Ca-α-SiAlON: A yellow phosphor for white light-emitting diodes

2004 ◽  
Vol 84 (26) ◽  
pp. 5404-5406 ◽  
Author(s):  
Rong-Jun Xie ◽  
Naoto Hirosaki ◽  
Ken Sakuma ◽  
Yoshinobu Yamamoto ◽  
Mamoru Mitomo
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
White Light Emitting Diodes

Application of Ba[sup 2+]⋅Mg[sup 2+] Co-doped Sr[sub 2]SiO[sub 4]:Eu Yellow Phosphor for White-Light-Emitting Diodes

2005 ◽  
Vol 152 (8) ◽  
pp. H121 ◽  
Author(s):  
Joung Kyu Park ◽  
Kyoung Jae Choi ◽  
Seung Hyok Park ◽  
Chang Hae Kim ◽  
Ho Kon Kim
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
White Light Emitting Diodes ◽  
Co Doped

The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

2000 ◽  
Vol 47 (7) ◽  
pp. 1330-1333 ◽  
Author(s):  
Y.K. Su ◽  
W.R. Chen ◽  
S.J. Chang ◽  
F.S. Juang ◽  
W.H. Lan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Shift ◽  
Light Emitting ◽  
High Injection ◽  
Metal Semiconductor Metal ◽  
Injection Currents

Application of strontium silicate yellow phosphor for white light-emitting diodes

2004 ◽  
Vol 84 (10) ◽  
pp. 1647-1649 ◽  
Author(s):  
Joung Kyu Park ◽  
Chang Hae Kim ◽  
Seung Hyok Park ◽  
Hee Dong Park ◽  
Se Young Choi
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Yellow Phosphor ◽  
White Light Emitting Diodes ◽  
Strontium Silicate
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