scholarly journals High thermal conductivity driven by the unusual phonon relaxation time platform in 2D monolayer boron arsenide

RSC Advances ◽  
2020 ◽  
Vol 10 (42) ◽  
pp. 25305-25310
Author(s):  
Yanxiao Hu ◽  
Dengfeng Li ◽  
Yan Yin ◽  
Shichang Li ◽  
Hangbo Zhou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Relaxation Time ◽  
High Thermal Conductivity ◽  
Research Attention ◽  
Boron Arsenide ◽  
Phonon Relaxation Time

The cubic boron arsenide (BAs) crystal has received extensive research attention because of its ultra-high thermal conductivity comparable to that of diamond.

Experimental observation of high thermal conductivity in boron arsenide

Science ◽  
2018 ◽  
Vol 361 (6402) ◽  
pp. 575-578 ◽  
Author(s):  
Joon Sang Kang ◽  
Man Li ◽  
Huan Wu ◽  
Huuduy Nguyen ◽  
Yongjie Hu
Keyword(s):  
Thermal Conductivity ◽  
Experimental Observation ◽  
High Thermal Conductivity ◽  
Boron Arsenide

High thermal conductivity in covalently bonded bi-layer honeycomb boron arsenide

2021 ◽  
Vol 17 ◽  
pp. 100346
Author(s):  
Y. Hu ◽  
Y. Yin ◽  
G. Ding ◽  
J. Liu ◽  
H. Zhou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Thermal Conductivity ◽  
Covalently Bonded ◽  
Boron Arsenide

scholarly journals Seeded growth of boron arsenide single crystals with high thermal conductivity

2018 ◽  
Vol 112 (3) ◽  
pp. 031903 ◽  
Author(s):  
Fei Tian ◽  
Bai Song ◽  
Bing Lv ◽  
Jingying Sun ◽  
Shuyuan Huyan ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
High Thermal Conductivity ◽  
Seeded Growth ◽  
Boron Arsenide

Unusual high thermal conductivity in boron arsenide bulk crystals

Science ◽  
2018 ◽  
Vol 361 (6402) ◽  
pp. 582-585 ◽  
Author(s):  
Fei Tian ◽  
Bai Song ◽  
Xi Chen ◽  
Navaneetha K. Ravichandran ◽  
Yinchuan Lv ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Thermal Conductivity ◽  
Bulk Crystals ◽  
Boron Arsenide

scholarly journals High Thermal Conductivity in Boron Arsenide: From Prediction to Reality

2019 ◽  
Vol 58 (18) ◽  
pp. 5824-5831 ◽  
Author(s):  
Fei Tian ◽  
Zhifeng Ren
Keyword(s):  
Thermal Conductivity ◽  
High Thermal Conductivity ◽  
Boron Arsenide

scholarly journals High-pressure phases of boron arsenide with potential high thermal conductivity

2019 ◽  
Vol 99 (17) ◽  
Author(s):  
Linyan Wang ◽  
Fei Tian ◽  
Xiaowei Liang ◽  
Yuhao Fu ◽  
Xufeng Mu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Pressure ◽  
High Thermal Conductivity ◽  
Boron Arsenide

Role of Phonon Dispersion in Lattice Thermal Conductivity Modeling

2004 ◽  
Vol 126 (3) ◽  
pp. 376-380 ◽  
Author(s):  
J. D. Chung ◽  
A. J. H. McGaughey ◽  
M. Kaviany
Keyword(s):  
Thermal Conductivity ◽  
Relaxation Time ◽  
Lattice Thermal Conductivity ◽  
Phonon Dispersion ◽  
Phonon Relaxation Time ◽  
Dynamics Simulations ◽  
Transfer Mechanisms ◽  
Conductivity Modeling ◽  
Fitting Parameters

The role of phonon dispersion in the prediction of the thermal conductivity of germanium between temperatures of 2 K and 1000 K is investigated using the Holland approach. If no dispersion is assumed, a large, nonphysical discontinuity is found in the transverse phonon relaxation time over the entire temperature range. However, this effect is masked in the final prediction of the thermal conductivity by the use of fitting parameters. As the treatment of the dispersion is refined, the magnitude of the discontinuity is reduced. At the same time, discrepancies between the high temperature predictions and experimental data become apparent, indicating that the assumed heat transfer mechanisms (i.e., the relaxation time models) are not sufficient to account for the expected thermal transport. Molecular dynamics simulations may be the most suitable tool available for addressing this issue.

Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

2020 ◽  
Vol 127 (5) ◽  
pp. 055105 ◽  
Author(s):  
Zhiyong Wei ◽  
Ze Yang ◽  
Ming Liu ◽  
Honglei Wu ◽  
Yunfei Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Thermal Conductivity ◽  
Thermal Boundary Conductance ◽  
Boron Arsenide

scholarly journals Different Effects of Mg and Si Doping on the Thermal Transport of Gallium Nitride

2021 ◽  
Vol 8 ◽  
Author(s):  
Shaoxun Li ◽  
Linfeng Yu ◽  
Chengdong Qi ◽  
Kun Du ◽  
Guangzhao Qin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Relaxation Time ◽  
Gallium Nitride ◽  
Optical Phonon ◽  
Thermal Transport ◽  
Si Doped ◽  
Phonon Relaxation Time ◽  
Mg Doped ◽  
Thermal Conductivities ◽  
Photoelectric Devices

Mg and Si as the typical dopants for p- and n-type gallium nitride (GaN), respectively, are widely used in GaN-based photoelectric devices. The thermal transport properties play a key role in the thermal stability and lifetime of photoelectric devices, which are of significant urgency to be studied, especially for the Mg- and Si-doped GaN. In this paper, the thermal conductivities of Mg- and Si-doped GaN were investigated based on first-principles calculations and phonon Boltzmann transport equation. The thermal conductivities of Mg-doped GaN are found to be 5.11 and 4.77 W/mK for in-plane and cross-plane directions, respectively. While for the Si-doped GaN, the thermal conductivity reaches the smaller value, which are 0.41 and 0.51 W/mK for in-plane and cross-plane directions, respectively. The decrease in thermal conductivity of Mg-doped GaN is attributed to the combined effect of low group velocities of optical phonon branches and small phonon relaxation time. In contrast, the sharp decrease of the thermal conductivity of Si-doped GaN is mainly attributed to the extremely small phonon relaxation time. Besides, the contribution of acoustic and optical phonon modes to the thermal conductivity has changed after GaN being doped with Mg and Si. Further analysis from the orbital projected electronic density of states and the electron localization function indicates that the strong polarization of Mg-N and Si-N bonds and the distortion of the local structures together lead to the low thermal conductivity. Our results would provide important information for the thermal management of GaN-based photoelectric devices.

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