scholarly journals Prediction of intermediate band in Ti/V doped γ-In2S3

RSC Advances ◽  
2022 ◽  
Vol 12 (3) ◽  
pp. 1331-1340
Author(s):  
R. Mariyal Jebasty ◽  
Anja Olafsen Sjåstad ◽  
R. Vidya

We find the band structure of In1.5V0.5S3 with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2S3.

2021 ◽  
Author(s):  
Jianbo Yin ◽  
Xiaobin Yan ◽  
Min Zhu

Abstract In this paper, the electronic structure and optical properties of CdS doped by Sn with different concentrations were investigated by first principles. The calculation results of electronic structure show that the doping of Sn can produce a deep impurity level band in the band structure of CdS. The calculation results of optical property show that Sn doping can increase the light absorption coefficient and conductivity of CdS. The overall calculation results show that Sn doping can produce stable intermediate band structure and significantly improve the optical property of CdS.


2013 ◽  
Vol 333-335 ◽  
pp. 1955-1958
Author(s):  
Chao Xu ◽  
Dong Chen

In this paper, we investigate the structural, electronic and elastic properties of rutile using the ultra-soft pseudo-potential scheme in the framework of density functional theory, together with the generalized gradient approximation. The calculated lattice constants and elastic constants are generally consistent with the other results. Our aim is twofold. First, density functional theory is a fine theory that can obtain reliable results. Second, rutile can be used in the modern industry, thus it should be carefully investigated. The elastic constants dependences on pressure are calculated. It is found that rutile is stable in the pressure range of 020Gpa. The anisotropy of this compound increases with applied pressure. Besides, the analysis of band structure is also given. The calculated band structure shows that rutile belongs to direct-forbidden-gap semiconductors.


Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS

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