scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

2021 ◽  
Vol 40 (1) ◽  
Author(s):  
Emerson Roberto Santos ◽  
Lucas Henrique Silva de Jesus ◽  
Elvo Calixto Burini Junior ◽  
Roberto Koji Onmori ◽  
Wang Shu Hui

In this work, circular economy was investigated for commercial indium tin oxide (ITO) thin films deposited on glass substrates obtained from degraded organic light-emitting diodes (OLED). These devices were assembled and polarized at laboratory in a previous work. For each substrate, with geometry 2.5 × 2.5 cm, four OLEDs with active area of 3 × 3 mm were set up. These OLED devices were assembled with ITO as the electrode anode and successive depositions of other materials (layer-by-layer), to form the complete structure. To obtain the recovered ITO, all layers were removed from the samples containing the OLEDs previously mounted, remaining only the ITO thin films, that were cleaned with commercial product together with the received ITO/glass samples. Both samples were compared using some techniques, such as: colorimetry, electrical resistance, and Raman spectroscopy. A methodology with light-emitting diode (LED) device polarized emitting light crossing the ITO thin films was used, and the luminance with chromaticity coordinates was obtained, revealing the good transparency of the thin films. Electrical resistance of recovered ITO revealed five higher orders of magnitude in comparison to the one of received ITO. This fact can be tributed to a poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) layer, causing corrosion of the ITO thin films during the assembly of OLEDs or loss of the field lines created during the electrical measurements by probes of four-point probe. Raman spectroscopy did not show satisfactory results in the chemical composition analyses of the samples, but it indicated good cleaning process of the samples before the analyses.


2000 ◽  
Vol 611 ◽  
Author(s):  
Stefania Privitera ◽  
Francesco Meinardi ◽  
Simona Quilici ◽  
Francesco La Via ◽  
Corrado Spinella ◽  
...  

ABSTRACTThe processes of nucleation and growth of the C54 TiSi2 phase into the C49 phase in thin films have been studied by electrical measurements and micro-Raman spectroscopy. The Raman spectra have been acquired scanning large silicide areas (100×50 μm2) in step of 0.5 μm. Images showing the evolution of the C54 grains during the transition have been obtained for temperatures between 680 and 720 °C and the transformed fraction, the density and the size distribution of the C54 grains have been measured as a function of the temperature and the annealing time. The activation energies for the nucleation rate and the growth velocity have been determined obtaining values of 4.9 ± 0.7 eV and 4.5 ± 0.9 eV, respectively.


Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Correction for ‘Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2’ by Jonas Keukelier et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d0tc04086j.


The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester

2013 ◽  
Vol 44 ◽  
pp. 82-90 ◽  
Author(s):  
S. Kozyukhin ◽  
M. Veres ◽  
H.P. Nguyen ◽  
A. Ingram ◽  
V. Kudoyarova

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.


2013 ◽  
Vol 114 (18) ◽  
pp. 183504 ◽  
Author(s):  
Quan Wang ◽  
Yanmin Zhang ◽  
Ran Hu ◽  
Daohan Ge ◽  
Naifei Ren

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).


2003 ◽  
Vol 64 (9-10) ◽  
pp. 1989-1993 ◽  
Author(s):  
E.P. Zaretskaya ◽  
V.F. Gremenok ◽  
V. Riede ◽  
W. Schmitz ◽  
K. Bente ◽  
...  

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