Broadband Coherent Anti-Stokes Raman Spectroscopy Characterization of Polymer Thin Films

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

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Fabrication and Mechanical Characterization of Semi-Free-Standing (Conjugated) Polymer Thin Films

Langmuir ◽

10.1021/la4032267 ◽

2013 ◽

Vol 30 (18) ◽

pp. 5217-5223 ◽

Cited By ~ 9

Author(s):

Jaime Martín ◽

Miguel Muñoz ◽

Mario Encinar ◽

Montserrat Calleja ◽

Marisol Martín-González

Keyword(s):

Thin Films ◽

Conjugated Polymer ◽

Mechanical Characterization ◽

Polymer Thin Films ◽

Free Standing

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Characterization of IrO2 thin films by Raman spectroscopy

Thin Solid Films ◽

10.1016/s0040-6090(96)09545-4 ◽

1997 ◽

Vol 301 (1-2) ◽

pp. 7-11 ◽

Cited By ~ 56

Author(s):

P.C Liao ◽

C.S Chen ◽

W.S Ho ◽

Y.S Huang ◽

K.K Tiong

Keyword(s):

Thin Films ◽

Raman Spectroscopy

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Challenges in the ambient Raman spectroscopy characterization of methylammonium lead triiodide perovskite thin films

Frontiers of Optoelectronics ◽

10.1007/s12200-016-0573-8 ◽

2016 ◽

Vol 9 (1) ◽

pp. 81-86 ◽

Cited By ~ 17

Author(s):

Yuanyuan Zhou ◽

Hector F. Garces ◽

Nitin P. Padture

Keyword(s):

Thin Films ◽

Raman Spectroscopy

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Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.54 ◽

2008 ◽

Vol 47 (1) ◽

pp. 54-58 ◽

Cited By ~ 10

Author(s):

Kuninori Kitahara ◽

Hiroya Ogasawara ◽

Junji Kambara ◽

Mitsunori Kobata ◽

Yasutaka Ohashi

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Chemical Etching ◽

Polycrystalline Silicon ◽

Silicon Thin Films

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Production and Characterization of Carbon Thin Films by the Magnetron Sputtering Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.881.471 ◽

2016 ◽

Vol 881 ◽

pp. 471-474 ◽

Cited By ~ 2

Author(s):

D.L.C. Silva ◽

L.R.P Kassab ◽

J.R. Martinelli ◽

A.D. Santos ◽

M.F. Pillis

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Magnetron Sputtering ◽

Carbon Film ◽

Carbon Films ◽

Buffer Layers ◽

Degree Of Crystallinity ◽

X Ray Diffraction ◽

Carbon Thin Films

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.

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Optical Characterization of Europium-Doped Calcium Fluoride Thin Films Grown on Silicon by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-446-429 ◽

1996 ◽

Vol 446 ◽

Author(s):

X.M. Fang ◽

W.K. Liu ◽

W. Shan ◽

T. Chatterjee ◽

P.J. Mccann ◽

...

Keyword(s):

Thin Films ◽

Emission Spectra ◽

Vibrational States ◽

Zero Phonon Line ◽

Phonon Line ◽

X Ray ◽

Integrated Intensity ◽

Vibronic Sideband ◽

Anti Stokes

AbstractPhotoluminescence measurements have been made on Eu-doped CaF2 thin films grown on Si(100) substrates. The dependence of the integrated intensity of both the zero-phonon line and the vibronic sideband on temperature and Eu concentration has been studied in the range of 10 – 300 K and 0.14 – 7.48 at. %, respectively. An anti-Stokes feature is visible in the emission spectra at 75 K, indicating a significant occupation of the excited vibrational states of Eu2+ by phonons before the transition at temperatures above 75 K. The integrated intensity of the vibronic sideband increases slightly as temperature increases. The solubility of Eu in CaF2 thin films grown on Si(100) is found to be somewhere around 4.05 at. % as confirmed by the increase of the line width of x-ray rocking curves and the decrease in the integrated intensity of the zero-phonon line with Eu concentration.

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