Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
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Here, novel lateral PtSe2 p–n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).
2020 ◽
Vol 12
(23)
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pp. 26213-26221
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2020 ◽
Vol 12
(7)
◽
pp. 8533-8538
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