Single nanoflake-based PtSe2 p–n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes

2021 ◽  
Vol 9 (1) ◽  
pp. 199-207
Author(s):  
Sikandar Aftab ◽  
Ms Samiya ◽  
Hafiz Mansoor Ul Haq ◽  
Muhammad Waqas Iqbal ◽  
Muhammad Hussain ◽  
...  

Here, novel lateral PtSe2 p–n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).

2018 ◽  
Vol 47 (16) ◽  
pp. 6342-6369 ◽  
Author(s):  
Ki Kang Kim ◽  
Hyun Seok Lee ◽  
Young Hee Lee

The construction of large surface area hexagonal boron nitride for van der Waals heterostructures and 2D-layered electronics is reviewed.


2020 ◽  
Vol 12 (23) ◽  
pp. 26213-26221 ◽  
Author(s):  
Christy Roshini Paul Inbaraj ◽  
Roshan Jesus Mathew ◽  
Rajesh Kumar Ulaganathan ◽  
Raman Sankar ◽  
Monika Kataria ◽  
...  

2014 ◽  
Vol 105 (21) ◽  
pp. 212405 ◽  
Author(s):  
M. Venkata Kamalakar ◽  
André Dankert ◽  
Johan Bergsten ◽  
Tommy Ive ◽  
Saroj P. Dash

2014 ◽  
Vol 25 (35) ◽  
pp. 355202 ◽  
Author(s):  
Hongwei Guo ◽  
Yunlong Liu ◽  
Yang Xu ◽  
Nan Meng ◽  
Hongtao Wang ◽  
...  

2020 ◽  
Vol 12 (7) ◽  
pp. 8533-8538 ◽  
Author(s):  
Takuya Iwasaki ◽  
Kosuke Endo ◽  
Eiichiro Watanabe ◽  
Daiju Tsuya ◽  
Yoshifumi Morita ◽  
...  

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