Interfacial Charge-Transfer Enhances the Dual-Function of Porous NiCo2S4@SiO2 Heterojunction for High-Performance Li-S Batteries

2022 ◽  
Author(s):  
Shuangqing Fan ◽  
Hao-Qiang Cao ◽  
Jianjun Song ◽  
Minghui Cao ◽  
Jie Su
Keyword(s):  
Charge Transfer ◽  
Charge Density ◽  
High Performance ◽  
Transfer Effect ◽  
Dual Function ◽  
Interfacial Charge Transfer ◽  
Sulfur Host ◽  
Interfacial Charge

Porous NiCo2S4@SiO2 is employed as sulfur host. The negatively charged SiO2 can increase the charge density and conductivity of NiCo2S4 and accelerate the conversion of sulfur. The charge transfer effect...

Understanding the interfacial charge transfer in CVD grown Bi2O2Se/CsPbBr3 nanocrystals heterostructure and its exploitation in superior photodetection: Experiment vs. Theory

Nanoscale ◽  
2021 ◽  
Author(s):  
Md Tarik Hossain ◽  
Mandira Das ◽  
Joydip Ghosh ◽  
Subhradip Ghosh ◽  
Pravat K. Giri
Keyword(s):  
Charge Transfer ◽  
Energy Harvesting ◽  
Crucial Role ◽  
High Performance ◽  
Van Der Waals ◽  
Interfacial Charge Transfer ◽  
Semiconductor Heterostructure ◽  
Efficient Charge ◽  
Energy Harvesting Devices ◽  
Interfacial Charge

Efficient charge transfer in 2D semiconductor heterostructure plays a crucial role in high-performance photodetectors and energy harvesting devices. Non-van der Waals 2D Bi2O2Se has enormous potential for high-performance optoelectronics, though...

A high-performance photodetector based on an inorganic perovskite–ZnO heterostructure

2017 ◽  
Vol 5 (25) ◽  
pp. 6115-6122 ◽  
Author(s):  
Heng Liu ◽  
Xingwang Zhang ◽  
Liuqi Zhang ◽  
Zhigang Yin ◽  
Denggui Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
High Performance ◽  
Interfacial Charge Transfer ◽  
Inorganic Perovskite ◽  
Interfacial Charge

CsPbBr3/ZnO heterostructure photodetectors exhibit a high photoresponsivity because of the interfacial charge transfer from perovskite to ZnO.

scholarly journals Interfacial charge-transfer doping of metal halide perovskites for high performance photovoltaics

2019 ◽  
Vol 12 (10) ◽  
pp. 3063-3073 ◽  
Author(s):  
Nakita K. Noel ◽  
Severin N. Habisreutinger ◽  
Alba Pellaroque ◽  
Federico Pulvirenti ◽  
Bernard Wenger ◽  
...  
Keyword(s):  
Charge Transfer ◽  
High Performance ◽  
Radiative Recombination ◽  
Metal Halide ◽  
Device Performance ◽  
Interfacial Charge Transfer ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Interfacial Charge

We demonstrate a method for controlled p-doping of the halide perovskite surface using molecular dopants, resulting in reduced non-radiative recombination losses and improved device performance.

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