Effects of incorporation of Ag into a kesterite Cu2ZnSnS4 thin film on its photoelectrochemical properties for water reduction

Author(s):  
Shigeru Ikeda ◽  
Thi Hiep Nguyen ◽  
Riku Okamato ◽  
Kilas Remeika ◽  
Imane Abdellaoui ◽  
...  

Kesterite Cu2ZnSnS4 (CZTS) thin films in which the Cu site was partially replaced with Ag were prepared by spray deposition on an Mo-coated glass substrate. Successful replacement of Cu components...

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
M. A. Sangamesha ◽  
K. Pushpalatha ◽  
G. L. Shekar ◽  
S. Shamsundar

A dye-sensitized nanocrystalline copper sulphide (CuS) solar cell is developed using crystal violet (CV) as a photosensitizer. Nanocrystalline CuS thin film is deposited on indium tin oxide- (ITO-) coated glass substrate by chemical bath deposition (CBD) technique. These thin films are characterized for their structural, optical and electrical properties using X-ray diffractometer (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). Optical absorbance measurements from UV-visible spectrometer at normal incidence of light in the wavelength range of 320–1100 nm and current-voltage (I-V) measurements were also made. The deposited CuS thin film on ITO-coated glass substrate may be used as a photo electrode in the fabrication of dye-sensitized solar cell (DSSC). The carbon soot collected on the substrate is used as a counter electrode. The counter electrode coupled with a dye-sensitized CuS thin film along with a redox electrolyte mixture is used to develop a complete photovoltaic cell. The fill factor and efficiency were evaluated for the developed DSSC.


2019 ◽  
Vol 43 (28) ◽  
pp. 11113-11124 ◽  
Author(s):  
Khadija Munawar ◽  
Fouzia Perveen ◽  
Muhammad Mehmood Shahid ◽  
Wan Jeffrey Basirun ◽  
Misni Bin Misran ◽  
...  

Thin films of a Ni3Mn3Ti6O18 solid solution photoanode have been deposited on an FTO coated glass substrate and experimental results are supported by DFT studies.


2021 ◽  
Vol 16 (2) ◽  
pp. 136-141
Author(s):  
Jingyuan Zhang ◽  
Yusheng Liu ◽  
Jianing Song ◽  
Mu Zhang ◽  
Xiaodong Li

The Cu2ZnSnS4 (CZTS) thin films were fabricated by the direct solution coating method using a novel non-particulate ink. The ink was formulated using ethanol as the solvent and 1,2-diaminopropane as the complex-ing agent. The pure phase kesterite films with good crystallinity, large-sized crystals and excellent electrical properties were prepared by the spin-coating deposition technique using the homogeneous and air-stable ink. It was found that the subsequent pre-treatment temperature had an influence on the film crystallinity and electrical properties. The best film was obtained by pre-treating the spin-coated film at 250 °C, and then post-annealing at 560 °C. The film shows a narrow bandgap of 1.52 eV and excellent electrical properties, with a resistivity of 0.07 Ocm, carrier concentration of 3.0 x 1017 cm-3, and mobility of 4.15 cm2 V-1 s-1. The novel non-particulate ink is promising for printing high quality CZTS thin films as absorber layers of thin film solar cells.


RSC Advances ◽  
2019 ◽  
Vol 9 (14) ◽  
pp. 7992-8001 ◽  
Author(s):  
Mahsa Pirhashemi ◽  
Sami Elhag ◽  
Rania E. Adam ◽  
Aziz Habibi-Yangjeh ◽  
Xianjie Liu ◽  
...  

ZnO NRs hydrothermally grown on Au coated glass substrate, followed by deposition of Ag2CrO4 particles via SILAR route. The content of the Ag2CrO4 particles on the ZnO NRs were controlled by changing the number of SILAR cycles.


2006 ◽  
Vol 514-516 ◽  
pp. 193-197
Author(s):  
Anatoli Khodorov ◽  
M.J.M. Gomes

Lanthanum modified lead zirconate titanate (PLZT) thin films were fabricated on indium doped tin oxide (ITO) - coated glass substrate by sol-gel method. The structure of the films was characterized with XRD and SEM. In the case of PLZT the dielectric function was modelled as a sum of Lorentzian oscillators and found by fitting the transmittance and reflectance spectra measured at normal incidence in the wavelength range of 220-2400 nm. The anomalous behaviour of dielectric function was observed below the absorption edge that was suggested to be due to formation of some defect states. The evolution of the absorption edge as well as dielectric function with film thickness was observed and discussed.


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