A Novel Ethanol-Based Non-Particulate Ink for Spin-Coating Cu2ZnSnS4 Thin Film

2021 ◽  
Vol 16 (2) ◽  
pp. 136-141
Author(s):  
Jingyuan Zhang ◽  
Yusheng Liu ◽  
Jianing Song ◽  
Mu Zhang ◽  
Xiaodong Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Treatment Temperature ◽  
Coated Film ◽  
Coating Method ◽  
Pre Treatment ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

The Cu2ZnSnS4 (CZTS) thin films were fabricated by the direct solution coating method using a novel non-particulate ink. The ink was formulated using ethanol as the solvent and 1,2-diaminopropane as the complex-ing agent. The pure phase kesterite films with good crystallinity, large-sized crystals and excellent electrical properties were prepared by the spin-coating deposition technique using the homogeneous and air-stable ink. It was found that the subsequent pre-treatment temperature had an influence on the film crystallinity and electrical properties. The best film was obtained by pre-treating the spin-coated film at 250 °C, and then post-annealing at 560 °C. The film shows a narrow bandgap of 1.52 eV and excellent electrical properties, with a resistivity of 0.07 Ocm, carrier concentration of 3.0 x 1017 cm-3, and mobility of 4.15 cm2 V-1 s-1. The novel non-particulate ink is promising for printing high quality CZTS thin films as absorber layers of thin film solar cells.

scholarly journals Study on the Optimization of Cu-Zn-Sn-O to Prepare Cu2ZnSnS4 Thin Film via a Nano Ink Coating Method

2021 ◽  
Vol 9 ◽  
Author(s):  
Qian Li ◽  
Jinpeng Hu ◽  
Yaru Cui ◽  
Juan Wang ◽  
Jinjing Du ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ball Milling ◽  
Spin Coating ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Sem Images ◽  
Coating Method ◽  
Cu2znsns4 Thin Film ◽  
Influence Of Ph

To reduce the formation of the impurity phase, a buffer volume can be used to expands and smooths the surface of Cu2ZnSnS4(CZTS) thin film. In this study, a Cu-Zn-Sn-O(CZTO) precursor was synthesized through the process of coprecipitation-calcination-ball milling-spin coating. The influence of pH, temperature, and PVP on the constituent of hydroxides was investigated in the process of coprecipitation. Cu-Zn-Sn-O with appropriate compositions could be obtained by regulating the temperature and preservation time of the calcination stage. After ball milling to form a nano ink, and then spin coating, SEM images proved the generation of CZTO precursors, which effectively promoted the formation of Cu2ZnSnS4 thin films. Finally, the phase, microstructure, chemical composition, and optical properties of the Cu2ZnSnS4 thin films prepared by sulfurized annealing CZTO precursors were characterized by EDX, XRD, Raman, FESEM, Hall effect, and UV methods. The prepared CZTS thin film demonstrated a band gap of 1.30 eV, which was suitable for improving the performance of CZTS thin film solar cells.

The Optical and Electrical Properties of Polymer Poly (3-Hexylthiophene) P3HT by Heat Treatment

2015 ◽  
Vol 1109 ◽  
pp. 419-423
Author(s):  
C.H. Rosmani ◽  
A.Z. Zainurul ◽  
M. Rusop ◽  
S. Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Optical Properties ◽  
Electrical Properties ◽  
Spin Coating ◽  
Effect Of Temperature ◽  
Optical And Electrical Properties ◽  
Optical Absorption Spectra ◽  
Coating Method

The polymer of poly (3-hexylthiophene) was active layer in application such as solar cells. In this paper, P3HT has been chosed to know the effect of temperature onto P3HT. The optical properties of P3HT were measured by using photoluminescence spectroscopy (PL) and UV-Vis measurement. The polymer of P3HT has been spin coated on the glass by using spin-coating method for thin films produced. The temperature was measured start at 60°C to 180 o C. From PL result the peak was exist at range 500-600 nm and started moved to left side when temperature increase. The UV-Vis result showed at range 400-500 nm towards to blue shifted. After heat treatment, the optical absorption spectra for the thin film of P3HT on the glass showed a distinct red-shifted with developing vibronic features of P3HT and the quenched photoluminescence (PL) spectrum was considerably restored .Keywords: P3HT; temperature; Uv-Vis; photoluminescence; PL; I-V

Electrical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film Prepared Using Sol-Gel Spin-Coating Method at Different Doping Concentrations

2013 ◽  
Vol 667 ◽  
pp. 507-510 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Al Doping ◽  
Coating Method ◽  
Doped Zno

Aluminum (Al) doped Zinc Oxide (ZnO) thin films were prepared using sol-gel spin-coating method at different doping concentrations. The effects of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using Current-Voltage (I-V) measurement and field emission scanning electron microscope (FESEM) for electrical properties and surface morphology, respectively. The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The FESEM investigations show that the nanoparticles size becomes smaller and denser as the doping concentration increase.

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

Effects of incorporation of Ag into a kesterite Cu2ZnSnS4 thin film on its photoelectrochemical properties for water reduction

2021 ◽  
Author(s):  
Shigeru Ikeda ◽  
Thi Hiep Nguyen ◽  
Riku Okamato ◽  
Kilas Remeika ◽  
Imane Abdellaoui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrate ◽  
Spray Deposition ◽  
Photoelectrochemical Properties ◽  
Coated Glass Substrate ◽  
Coated Glass ◽  
Water Reduction ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

Kesterite Cu2ZnSnS4 (CZTS) thin films in which the Cu site was partially replaced with Ag were prepared by spray deposition on an Mo-coated glass substrate. Successful replacement of Cu components...

Annealing Effect on Morphology Optical and Crystallographic Properties of Solution-Based Cu2ZnSnS4 Thin Films

2020 ◽  
Vol 12 (3) ◽  
pp. 388-391
Author(s):  
Raees A. Gani Shaikh ◽  
Sagar A. More ◽  
Gauri G. Bisen ◽  
Sanjay S. Ghosh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Sol Gel ◽  
Crystallographic Structure ◽  
Sem Images ◽  
Promising Alternative ◽  
Coating Method ◽  
Czts Thin Films

CZTS chalcopyrite semiconductor has received attention as a promising alternative as an absorber in thin-film solar cells because of the high absorption coefficient, direct bandgap (1.5 eV), nontoxic elements and sustained high electrical and optical properties. In the present work, CZTS thin film has been developed by the sol–gel spin coating method by thermal decomposition of metal ions and thiourea complexes under ambient environment. Annealing study of the above prepared CZTS thin films has been performed. The prepared CZTS samples were annealed at different temperatures 250 °C, 275 °C, 300 °C, and 325 °C respectively. Crystallographic structure, surface morphology, and optical properties were studied. XRD pattern shows the kesterite structure of the films with characteristics peaks for planes (112), (200), (220), and (312). Crystallite size, strain and dislocation densities were calculated. Sample annealed at 300 °C shows the most intense XRD peak and hence larger grain size. Grain size tends to increase as the annealing temperature increases up to 300 °C. At 325 °C SEM images show that cracks are formed in the film. At lower temperatures uniform, homogenous, smooth and densely packed films are formed. Raman spectroscopy is used to determine phase purity because many of binary and ternary chalcogenides show XRD peaks at similar positions to that of CZTS. A single peak at 336 cm–1 shows the pure kestrite phase of CZTS for all films.

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

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