Ionic Liquid Exfoliated Ti3C2Tx MXene Nanosheets for Photoacoustic Imaging and Synergistic Photothermal/ Chemotherapy of Cancer

Author(s):  
Beibei Lu ◽  
Shunyou Hu ◽  
Dong Wu ◽  
Chengyu Wu ◽  
Zhenye Zhu ◽  
...  

Ti3C2Tx MXene is a new biocompatible, two-dimensional material with good photothermal effects, which shows great potential in cancer nano-drug research. In this study, a few-layer ionic liquid (IL)-Ti3C2Tx MXene nanosheets...

2020 ◽  
Vol 8 (5) ◽  
pp. 2167-2175 ◽  
Author(s):  
Dongyin Liu ◽  
Bing Liu ◽  
Chan Wang ◽  
Wei Jin ◽  
Qijun Zha ◽  
...  

Nano Research ◽  
2016 ◽  
Vol 10 (4) ◽  
pp. 1234-1248 ◽  
Author(s):  
Mei Chen ◽  
Shuzhen Chen ◽  
Chengyong He ◽  
Shiguang Mo ◽  
Xiaoyong Wang ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 645 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.


2015 ◽  
Vol 7 (36) ◽  
pp. 20430-20437 ◽  
Author(s):  
Cuicui Liu ◽  
Qiliang Deng ◽  
Guozhen Fang ◽  
Xuan Huang ◽  
Shuo Wang ◽  
...  

Author(s):  
F.V. Potemkin ◽  
E.I. Mareev ◽  
B.V. Rumiantsev ◽  
A.S. Bychkov ◽  
E.B. Cherepetskaya ◽  
...  

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