ChemInform Abstract: [Te8]2[Ta4O4Cl16]: A Two-Dimensional Tellurium Polycation Obtained via Ionic Liquid-Based Synthesis.

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

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A Novel Poly(ionic liquid) Interface-Free Two-Dimensional Monolithic Material for the Separation of Multiple Types of Glycoproteins

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b07668 ◽

2015 ◽

Vol 7 (36) ◽

pp. 20430-20437 ◽

Cited By ~ 22

Author(s):

Cuicui Liu ◽

Qiliang Deng ◽

Guozhen Fang ◽

Xuan Huang ◽

Shuo Wang ◽

...

Keyword(s):

Ionic Liquid ◽

Liquid Interface ◽

Two Dimensional ◽

Monolithic Material ◽

Poly Ionic Liquid

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In Silico Modeling of Hundred Thousand Experiments for Effective Selection of Ionic Liquid Phase Combinations in Comprehensive Two-Dimensional Gas Chromatography

Analytical Chemistry ◽

10.1021/acs.analchem.5b03688 ◽

2016 ◽

Vol 88 (4) ◽

pp. 2125-2131 ◽

Cited By ~ 12

Author(s):

Yada Nolvachai ◽

Chadin Kulsing ◽

Philip J. Marriott

Keyword(s):

Gas Chromatography ◽

Ionic Liquid ◽

Liquid Phase ◽

In Silico ◽

Two Dimensional ◽

In Silico Modeling ◽

Effective Selection ◽

Selection Of

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[Te8]2[Ta4O4Cl16]: A Two-dimensional Tellurium Polycation obtained via Ionic Liquid-Based Synthesis

Zeitschrift für anorganische und allgemeine Chemie ◽

10.1002/zaac.201100143 ◽

2011 ◽

Vol 637 (11) ◽

pp. 1481-1485 ◽

Cited By ~ 13

Author(s):

Dominic Freudenmann ◽

Claus Feldmann

Keyword(s):

Ionic Liquid ◽

Two Dimensional

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Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities

Micromachines ◽

10.3390/mi12121576 ◽

2021 ◽

Vol 12 (12) ◽

pp. 1576

Author(s):

Daniel Vaquero ◽

Vito Clericò ◽

Juan Salvador-Sánchez ◽

Jorge Quereda ◽

Enrique Diez ◽

...

Keyword(s):

Ionic Liquid ◽

Band Gap ◽

Field Effect Transistors ◽

Transition Metal Dichalcogenides ◽

Two Dimensional ◽

Spectroscopy Technique ◽

Promising Technique ◽

Transfer Characteristics ◽

Ambipolar Behavior ◽

Metal Dichalcogenides

Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. Due to their chemical stability, transition metal dichalcogenides (TMDs) are ideal candidates to produce ionic-liquid-gated FETs. Furthermore, as recently discovered, ILG can be used to obtain the band gap of two-dimensional semiconductors directly from the simple transfer characteristics. In this work, we present an overview of the operation principles of ionic liquid gating in TMD-based transistors, establishing the importance of the reference voltage to obtain hysteresis-free transfer characteristics, and hence, precisely determine the band gap. We produced ILG-based bilayer WSe2 FETs and demonstrated their ambipolar behavior. We estimated the band gap directly from the transfer characteristics, demonstrating the potential of ILG as a spectroscopy technique.

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