Impact of defect states on the capacitance voltage characteristics of space charge limited organic diodes, and determination of defect states

2021 ◽  
Vol 9 (14) ◽  
pp. 4903-4909
Author(s):  
Durgesh C. Tripathi ◽  
K. Sudheendra Rao ◽  
Y. N. Mohapatra
Keyword(s):  
Space Charge ◽  
Low Frequency ◽  
Defect States ◽  
Depletion Width ◽  
Capacitance Voltage ◽  
Voltage Dependent ◽  
Organic Diodes ◽  
Space Charge Limited

The capacitance rise in low frequency C–V curves originates due to diffusive storage of injected carriers within the bulk in the case of intrinsic devices, whereas a voltage dependent depletion width is the cause in the case of devices having traps.

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