Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation

1999 ◽  
Vol 79 (9) ◽  
pp. 763-769 ◽  
Author(s):  
R. Meaudre ◽  
M. Meaudre ◽  
R. Butte ◽  
S. Vignoli
2006 ◽  
Vol 100 (9) ◽  
pp. 093716 ◽  
Author(s):  
C. Z. Zhao ◽  
J. F. Zhang ◽  
M. B. Zahid ◽  
B. Govoreanu ◽  
G. Groeseneken ◽  
...  

1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.


2011 ◽  
Vol 59 (2(3)) ◽  
pp. 1713-1716 ◽  
Author(s):  
H. Utsunomiya ◽  
S. Goriely ◽  
H. Akimune ◽  
H. Harada ◽  
F. Kitatani ◽  
...  

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