Fast and High Photoresponsivity Gallium Telluride / Hafnium Selenide Van der Waals Heterostructure photodiode

2021 ◽  
Author(s):  
Amir M Afzal ◽  
Sohail Mumtaz ◽  
Muhammad Zahir Iqbal ◽  
Muhammad Waqas Iqbal ◽  
Alina Manzoor ◽  
...  
Keyword(s):  
Transition Metal ◽  
Van Der Waals ◽  
Semiconductor Materials ◽  
Transition Metal Dichalcogenide ◽  
Van Der Waals Heterostructure ◽  
Gallium Telluride ◽  
Optoelectronics Devices

Transition metal dichalcogenide (TMD) semiconductor materials-based van der Waals (vdW) heterostructures have gained huge attention due to their superior capabilities and multi-functionalities in electronics and optoelectronics devices. In this work,...

Study of photogenerated exciton dissociation in transition metal dichalcogenide van der Waals heterojunction A2-MWS4: A first-principle study

2021 ◽  
Author(s):  
Hong Cui ◽  
yazhou wang ◽  
Tong Liu ◽  
Yunjian Chen ◽  
Pengyue Shan ◽  
...  
Keyword(s):  
Hydrogen Production ◽  
Transition Metal ◽  
Production Efficiency ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenide ◽  
First Principle ◽  
Exciton Dissociation ◽  
Photocatalytic Hydrogen Production

In order to explore the photocatalytic hydrogen production efficiency of MoS2/WSe2 heterostructure (A2-MWS4) as photocatalysts, It is highly desirable to study the photogenerated exciton dissociation related to photocatalysis. The electronic...

Recent advances in black phosphorus and transition metal dichalcogenide–based electronic and optoelectronics devices

2020 ◽  
pp. 251-312 ◽  
Author(s):  
Wee Chong Tan ◽  
Xin Huang ◽  
Li Huang ◽  
Lin Wang ◽  
Xuewei Feng ◽  
...  
Keyword(s):  
Transition Metal ◽  
Black Phosphorus ◽  
Transition Metal Dichalcogenide ◽  
Recent Advances ◽  
Optoelectronics Devices

Optical properties of the layered transition‐metal‐dichalcogenide ReS2: Anisotropy in the van der Waals plane

1993 ◽  
Vol 74 (8) ◽  
pp. 5266-5268 ◽  
Author(s):  
K. Friemelt ◽  
M.‐Ch. Lux‐Steiner ◽  
E. Bucher
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenide ◽  
Layered Transition Metal

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 1814-1820 ◽  
Author(s):  
Chang-Soo Lee ◽  
Seung Jae Oh ◽  
Hoseok Heo ◽  
Seung-Young Seo ◽  
Juho Kim ◽  
...  
Keyword(s):  
Transition Metal ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenide ◽  
Van Der Waals Contacts

scholarly journals The role of Anderson’s rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures

2018 ◽  
Vol 20 (48) ◽  
pp. 30351-30364 ◽  
Author(s):  
Ke Xu ◽  
Yuanfeng Xu ◽  
Hao Zhang ◽  
Bo Peng ◽  
Hezhu Shao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transport Properties ◽  
First Principles ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenide ◽  
First Principles Calculations

We have investigated the structure and electronic, mechanical, transport and optical properties of van der Waals transition metal dichalcogenide heterostructures using first-principles calculations.

Tunable coupling of terahertz Dirac plasmons and phonons in transition metal dichalcogenide-based van der Waals heterostructures

2D Materials ◽  
2021 ◽  
Author(s):  
Icaro Rodrigues Lavor ◽  
Andrey Chaves ◽  
Francois M Peeters ◽  
Ben Van Duppen
Keyword(s):  
Transition Metal ◽  
Fermi Energy ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Transition Metal Dichalcogenide ◽  
Phonon Coupling ◽  
Van Der Waals Heterostructures ◽  
Composition And Structure ◽  
Metal Dichalcogenides ◽  
Tunable Coupling

Abstract Dirac plasmons in graphene hybridize with phonons of transition metal dichalcogenides (TMDs) when the materials are combined in so-called van der Waals heterostructures (vdWh), thus forming surface plasmon-phonon polaritons (SPPPs). The extend to which these modes are coupled depends on the TMD composition and structure, but also on the plasmons' properties. By performing realistic simulations that account for the contribution of each layer of the vdWh separately, we calculate how the strength of plasmon-phonon coupling depends on the number and composition of TMD layers, on the graphene Fermi energy and the specific phonon mode. From this, we present a semiclassical theory that is capable of capturing all relevant characteristics of the SPPPs. We find that it is possible to realize both strong and ultra-strong coupling regimes by tuning graphene's Fermi energy and changing TMD layer number.

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