Polarization engineered InGaN/GaN Visible-light photodiodes featuring high responsivity, bandpass response, and high speed

2021 ◽  
Author(s):  
Zesheng Lv ◽  
Yao Guo ◽  
Supeng Zhang ◽  
Quan Wen ◽  
Hao Jiang
Keyword(s):  
Visible Light ◽  
Quantum Efficiency ◽  
High Speed ◽  
Optoelectronic Devices ◽  
Quantum Structure ◽  
High Responsivity ◽  
P Type ◽  
Free Polarization

Optoelectronic devices, especially III-nitride quantum-structure devices, are suffering from a serise of material problems, such as polarization induced quantum efficiency drooping and lack of suitable p-type dopant. Herein, dopant-free polarization-induced...

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

In-line liquid-crystal microcell wave plates and their application for high-speed, reset-free polarization mode dispersion compensation in 40-Gbit/s systems

2003 ◽  
Vol 42 (27) ◽  
pp. 5407 ◽  
Author(s):  
Bharat R. Acharya ◽  
Lothar Möller ◽  
Kirk W. Baldwin ◽  
Robert A. MacHarrie ◽  
Ray A. Stepnoski ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
High Speed ◽  
Dispersion Compensation ◽  
Polarization Mode Dispersion ◽  
Polarization Mode ◽  
Mode Dispersion ◽  
Free Polarization

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

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