Ultrapure green light emission in one-dimensional hybrid lead perovskites: achieving recommendation 2020 standard

2021 ◽  
Author(s):  
Chang-Qing Jing ◽  
Qi-Long Liu ◽  
Cheng-Hao Zhao ◽  
Yan-Yu Zhao ◽  
Cheng-Yang Yue ◽  
...  
Keyword(s):  
Light Emission ◽  
Green Light ◽  
Color Purity ◽  
Light Emitting ◽  
One Dimensional ◽  
Green Light Emission

New 1D halide of [TMPDA]2Pb3Br10 displays a sharp green light emission at 526 nm with FWHM of 25 nm, PLQY of 71.95% and color purity of 91.1%, which achieves the Rec. 2020 standard, and represents the purest green light emitting 1D halide up to date.

scholarly journals Highly pure green light emission of perovskite CsPbBr_3 quantum dots and their application for green light-emitting diodes

2016 ◽  
Vol 24 (13) ◽  
pp. 15071 ◽  
Author(s):  
Cunlong Li ◽  
Zhigang Zang ◽  
Weiwei Chen ◽  
Zhiping Hu ◽  
Xiaosheng Tang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Green Light ◽  
Light Emitting ◽  
Green Light Emission

CsPbBr3–Cs4PbBr6 composite nanocrystals for highly efficient pure green light emission

Nanoscale ◽  
2019 ◽  
Vol 11 (47) ◽  
pp. 22899-22906 ◽  
Author(s):  
Miao He ◽  
Chunyun Wang ◽  
Jingzhou Li ◽  
Jiang Wu ◽  
Siwei Zhang ◽  
...  
Keyword(s):  
Light Emission ◽  
Light Emitting Diode ◽  
Solution Process ◽  
Green Light ◽  
Inert Gas ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Highly Efficient ◽  
Green Light Emission

All-inorganic perovskite CsPbBr3–Cs4PbBr6 composite nanocrystals (NCs) were synthesized via a convenient solution process without inert gas protection and systematically studied as green phosphors for light emitting diode (LED) applications.

Blue Light Emission from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
X. Y. Hou ◽  
G. Shi ◽  
W. Wang ◽  
F. L. Zhang ◽  
P. H. Hao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Green Light ◽  
Blue Shift ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Visible Luminescence ◽  
Infrared Reflection ◽  
Green Light Emission

ABSTRACTThrough a post treatment of light emitting porous silicon in boilingwater, a large blue shift of its photoluminescence (PL) spectrum hasbeen observed and a stable blue-green light emission at the peak wavelength down to 500 nm is achieved. The effect of boiling water treatment is suggested to be a kind of oxidation, which could reduce thesize of the Si column, fill up some micropores and strengthen the Siskeleton. The photoluminescence microscopic observation shows that the surface of blue light emitting porous silicon is composed of manysmall uniformly light-emitting domains at the size of several tens of μm. Fourier transform infrared reflection (FTIR) measurements show that the formation of Si-H bonds is not responsible for the visible luminescence in the very thin Si wires.

Realization of a Highly Oriented MAPbBr3 Perovskite Thin Film via Ion Exchange for Ultrahigh Color Purity Green Light Emission

2018 ◽  
Vol 3 (7) ◽  
pp. 1662-1669 ◽  
Author(s):  
Ting Zhao ◽  
Hongbin Liu ◽  
Mark E. Ziffer ◽  
Adharsh Rajagopal ◽  
Lijian Zuo ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Exchange ◽  
Light Emission ◽  
Green Light ◽  
Color Purity ◽  
Green Light Emission

scholarly journals Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Jun Wang ◽  
Jun Gou ◽  
Weizhi Li
Keyword(s):  
Power Efficiency ◽  
High Efficiency ◽  
Light Emission ◽  
Green Light ◽  
Emission Spectra ◽  
Iridium Complex ◽  
Light Emitting ◽  
Host Materials ◽  
Green Light Emission ◽  
Organic Devices

Stable green light emission and high efficiency organic devices with three polymer layers were fabricated using bis[2-(4′-tert-butylphenyl)-1-phenyl-1H-benzoimidazole-N,C2′] iridium(III) (acetylacetonate) doped in blended host materials. The 1 wt% doping concentration showed maximum luminance of 7841 cd/cm2at 25.6 V and maximum current efficiency of 9.95 cd/A at 17.2 V. The electroluminescence spectra of devices indicated two main peaks at 522 nm and 554 nm coming from phosphor dye and a full width at half maximum (FWHM) of 116 nm. The characteristics of using blended host, doping iridium complex, emission spectrum, and power efficiency of organic devices were investigated.

Compositional optimization of mixed cation Dion-Jacobson perovskites for efficient green light emission

2021 ◽  
Author(s):  
Xinshun Qin ◽  
Fangzhou Liu ◽  
Tik Lun Leung ◽  
Wenting Sun ◽  
Christoper Chang Sing Chan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Green Light ◽  
Light Emitting ◽  
Mixed Cation ◽  
Green Light Emission

Dion-Jacobson (DJ) perovskites have been demonstrated to be highly promising for improved lifetime and stability of solar cells, but their applications in light emitting diodes (LEDs) have been scarce. A...

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

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