Effect of Concentration of Nd3+ on the Photoluminescence and Ferroelectric Properties of Bi4-xNdxTi3O12 Films

Lead-free films of Bi4-xNdxTi3O12 were deposited on Pt(111)/Ti/SiO2/Si(100) substrate via spin-coating methods. It is shown that there are no secondary phases in Bi4-xNdxTi3O12 films and clear interfaces between the Bi4-xNdxTi3O12 films and substrates when the films are annealed at 700 ℃. And the Bi4-xNdxTi3O12 films also exhibit a blue light emission peak at 437 nm and a yellow light emission peak at 580 nm. There are narrower band gaps, higher dielectric constant and lower dielectric loss when Nd3+ concentration varies from 0 to 0.85. And the Bi3.15Nd0.85Ti3O12 film possesses the minimum of band gap energy (2.67 eV). Moreover, Bi3.55Nd0.45Ti3O12 film exhibits a minimal leakage current density and a maximal remanent polarization, which is highly beneficial for the potential applications in multi-functional devices.

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

Cavity Design and Optimization of Hybrid Quantum Dot Organic Light Emitting Devices for Blue Light Emission

The present search handles the blue light emission investigation of hybrid quantum dots organic light-emitting devices. The emissions at 445 nm and 460 nm have been examined for microcavity hybrid quantum dot organic light-emitting devices (QD-OLED) upon quantum dots of CdS and CdSe. External light emissions have been evaluated through a numerical model based on the transfer matrix for electromagnetic plane waves. The devices' optical properties are investigated based on internal reflectance and cavity length by considering the architecture consisting of multilayers thin-film structures. The overall performance of the light-emitting devices with emission at 445 nm showed an improvement of the enhancement factor and narrowing outcoupling emission relative to the devices with emission at 460 nm. Besides, the light-emitting devices based on CdS QDs revealed better performance relative to the devices based on CdSe QDs.