Barrier height enhancement of InP-basedn-Ga0.47In0.53As Schottky-barrier diodes grown by molecular beam epitaxy
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1993 ◽
Vol 32
(Part 1, No. 1B)
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pp. 502-510
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1983 ◽
Vol 1
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pp. 574
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2017 ◽
Vol 32
(3)
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pp. 035004
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2009 ◽
Vol 38
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pp. 574-580
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