Barrier height enhancement of InP-basedn-Ga0.47In0.53As Schottky-barrier diodes grown by molecular beam epitaxy

1988 ◽  
Vol 24 (11) ◽  
pp. 687-689 ◽  
Author(s):  
J.H. Kim ◽  
S.S. Li ◽  
L. Figueroa
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