Control of GaAs Schottky barrier height by formation of a thin off‐stoichiometric GaAs interlayer grown by low‐temperature molecular beam epitaxy
Keyword(s):
Keyword(s):
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 502-510
◽
Keyword(s):
Keyword(s):
1983 ◽
Vol 1
(3)
◽
pp. 574
◽
Keyword(s):
2017 ◽
Vol 32
(3)
◽
pp. 035004
◽
Keyword(s):
2017 ◽
Vol 32
(8)
◽
pp. 085007
◽
Keyword(s):
2009 ◽
Vol 26
(7)
◽
pp. 077201
◽
Keyword(s):