All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser
1999 ◽
Vol 201-202
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pp. 877-881
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1999 ◽
Vol 17
(3)
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pp. 1281
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Keyword(s):
1995 ◽
Vol 150
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pp. 1323-1327
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2003 ◽
Vol 103
(3)
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pp. 227-232
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Keyword(s):
2014 ◽
Vol 29
(3)
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pp. 035002
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