All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 ◽  
Vol 67 (16) ◽  
pp. 2332-2334 ◽  
Author(s):  
Mika Toivonen ◽  
Marko Jalonen ◽  
Arto Salokatve ◽  
Jari Näppi ◽  
Pekka Savolainen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer

AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy

1999 ◽  
Vol 28 (8) ◽  
pp. 980-985 ◽  
Author(s):  
P. Savolainen ◽  
M. Toivonen ◽  
S. Orsila ◽  
M. Saarinen ◽  
P. Melanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

1995 ◽  
Vol 31 (10) ◽  
pp. 797-799 ◽  
Author(s):  
M. Toivonen ◽  
J. Näppi ◽  
A. Salokatve ◽  
M. Pessa ◽  
M. Jalonen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Quantum Well Laser

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

2001 ◽  
Vol 29 (2) ◽  
pp. 75-77 ◽  
Author(s):  
T. Piwo?ski ◽  
P. Sajewicz ◽  
J. M. Kubica ◽  
M. Zbroszczyk ◽  
K. Regi?ski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Long Wavelength

Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications

1990 ◽  
Author(s):  
William J. Schaff ◽  
Stephen D. Offsey ◽  
Paul J. Tasker ◽  
Lester F. Eastman ◽  
S. McKernan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Speed ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Strained Layer
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