Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate
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2014 ◽
Vol 29
(3)
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pp. 035002
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2000 ◽
Vol 12
(2)
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pp. 128-130
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1996 ◽
pp. 15-20
1996 ◽
Vol 11
(8)
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pp. 1185-1188
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