Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

1995 ◽  
Vol 31 (21) ◽  
pp. 1876-1878 ◽  
Author(s):  
R.S. Prasad ◽  
S. Kanjanachuchai ◽  
J. Fernández ◽  
T.J. Thornton ◽  
A. Matsumura
Keyword(s):  
Quantum Wells ◽  
Thermally Grown Oxides ◽  
Mobility Degradation ◽  
Thermally Grown

In Situ and Ex Situ Investigation of the Spallation of Thermally Grown Oxides

2007 ◽  
pp. 1134-1139
Author(s):  
Philippe Lours ◽  
Yu Hong Qi ◽  
Yannick Le Maoult ◽  
Bernard Pieraggi
Keyword(s):  
Ex Situ ◽  
Thermally Grown Oxides ◽  
Thermally Grown

Stabilization of Silicon Surfaces by Thermally Grown Oxides*

1959 ◽  
Vol 38 (3) ◽  
pp. 749-783 ◽  
Author(s):  
M. M. Atalla ◽  
E. Tannenbaum ◽  
E. J. Scheibner
Keyword(s):  
Silicon Surfaces ◽  
Thermally Grown Oxides ◽  
Thermally Grown

Influence of bond coat thickness on the cyclic rumpling of thermally grown oxides

2006 ◽  
Vol 54 (7) ◽  
pp. 1815-1820 ◽  
Author(s):  
D.S. Balint ◽  
T. Xu ◽  
J.W. Hutchinson ◽  
A.G. Evans
Keyword(s):  
Bond Coat ◽  
Thermally Grown Oxides ◽  
Thermally Grown

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

2016 ◽  
Vol 858 ◽  
pp. 697-700 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Heiko B. Weber ◽  
Michael Krieger
Keyword(s):  
Electrical Properties ◽  
Response Time ◽  
Side Effect ◽  
Oxide Semiconductor ◽  
Epitaxial Layers ◽  
Interface Traps ◽  
Semiconductor Interface ◽  
Mos Capacitors ◽  
Thermally Grown Oxides ◽  
Thermally Grown

In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted into the epitaxial layers prior to the deposition of SiO2 by PECVD, in shallow depths and at concentrations at the oxide-semiconductor interface in the range of (5 x 1017…1 x 1019) cm-3. Those samples are compared with 31P-implanted 4H-SiC MOS capacitors with thermally grown oxides, which were primarily investigated in the previous work of the authors. It is shown that independently of the oxide technology phosphorus may lead to decrease of the density of interface traps, whose response time to the AC voltage is longer than 1 µs. The side-effect of the implantation of phosphorus is generation of the very fast interface states, which are able to follow the frequencies over 1 MHz.

Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)

2009 ◽  
Vol 106 (4) ◽  
pp. 044513 ◽  
Author(s):  
R. Esteve ◽  
A. Schöner ◽  
S. A. Reshanov ◽  
C.-M. Zetterling ◽  
H. Nagasawa
Keyword(s):  
Comparative Study ◽  
Free Standing ◽  
Thermally Grown Oxides ◽  
Thermally Grown
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