On the presence of aluminum in thermally grown oxides on 6H-silicon carbide [power MOSFETs]

IEEE Electron Device Letters ◽

10.1109/55.485192 ◽

1996 ◽

Vol 17 (3) ◽

pp. 136-138 ◽

Author(s):

S. Sridevan ◽

P.K. McLarty ◽

J. Baliga

Keyword(s):

Silicon Carbide ◽

Power Mosfets ◽

Thermally Grown Oxides ◽

Thermally Grown

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Structural and Analytical Studies of 4H Silicon Carbide MOSFETs with Thermally Grown Oxides

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596019 ◽

2006 ◽

Author(s):

T. Zheleva ◽

I. Levin ◽

D. Habersat ◽

A. Lelis ◽

M. Dautrich ◽

...

Keyword(s):

Silicon Carbide ◽

Thermally Grown Oxides ◽

Analytical Studies ◽

Thermally Grown

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On the correlation between the carbon content and the electrical quality of thermally grown oxides on p-type 6H–Silicon carbide

Applied Physics Letters ◽

10.1063/1.122562 ◽

1998 ◽

Vol 73 (15) ◽

pp. 2161-2163 ◽

Author(s):

Vickram R. Vathulya ◽

Dong Ning Wang ◽

Marvin H. White

Keyword(s):

Silicon Carbide ◽

Carbon Content ◽

Thermally Grown Oxides ◽

P Type ◽

Thermally Grown

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Mobility degradation in gated Si:SiGe quantum wells with thermally grown oxides

Electronics Letters ◽

10.1049/el:19951251 ◽

1995 ◽

Vol 31 (21) ◽

pp. 1876-1878 ◽

Author(s):

R.S. Prasad ◽

S. Kanjanachuchai ◽

J. Fernández ◽

T.J. Thornton ◽

A. Matsumura

Keyword(s):

Quantum Wells ◽

Thermally Grown Oxides ◽

Mobility Degradation ◽

Thermally Grown

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A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

IEEE Journal of Emerging and Selected Topics in Power Electronics ◽

10.1109/jestpe.2016.2563220 ◽

2016 ◽

Vol 4 (3) ◽

pp. 978-987 ◽

Author(s):

Gianpaolo Romano ◽

Asad Fayyaz ◽

Michele Riccio ◽

Luca Maresca ◽

Giovanni Breglio ◽

...

Keyword(s):

Silicon Carbide ◽

Short Circuit ◽

Power Mosfets ◽

Comprehensive Study

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Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3099455 ◽

2021 ◽

pp. 1-5

Author(s):

James A. Cooper ◽

Dallas T. Morisette ◽

Madankumar Sampath ◽

Cheryl A. Stellman ◽

Stephen B. Bayne ◽

...

Keyword(s):

Silicon Carbide ◽

Power Mosfets ◽

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Electrochemical impedance spectroscopy study of thermally grown oxides exhibiting constant phase element behaviour

Electrochimica Acta ◽

10.1016/j.electacta.2013.09.054 ◽

2013 ◽

Vol 113 ◽

pp. 99-108 ◽

Author(s):

L. Hamadou ◽

L. Aïnouche ◽

A. Kadri ◽

S. Ait Ali Yahia ◽

N. Benbrahim

Keyword(s):

Electrochemical Impedance Spectroscopy ◽

Impedance Spectroscopy ◽

Constant Phase Element ◽

Electrochemical Impedance ◽

Spectroscopy Study ◽

Thermally Grown Oxides ◽

Impedance Spectroscopy Study ◽

Thermally Grown

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Silicon and Silicon-Carbide Power MOSFETs

Pulse-Width Modulated DC-DC Power Converters ◽

10.1002/9781119009597.ch18 ◽

2015 ◽

pp. 819-890

Keyword(s):

Silicon Carbide ◽

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In Situ and Ex Situ Investigation of the Spallation of Thermally Grown Oxides

THERMEC 2006 - Materials Science Forum ◽

10.4028/0-87849-428-6.1134 ◽

2007 ◽

pp. 1134-1139

Author(s):

Philippe Lours ◽

Yu Hong Qi ◽

Yannick Le Maoult ◽

Bernard Pieraggi

Keyword(s):

Ex Situ ◽

Thermally Grown Oxides ◽

Thermally Grown

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Stabilization of Silicon Surfaces by Thermally Grown Oxides*

Bell System Technical Journal ◽

10.1002/j.1538-7305.1959.tb03907.x ◽

1959 ◽

Vol 38 (3) ◽

pp. 749-783 ◽

Author(s):

M. M. Atalla ◽

E. Tannenbaum ◽

E. J. Scheibner

Keyword(s):

Silicon Surfaces ◽

Thermally Grown Oxides ◽

Thermally Grown

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Influence of bond coat thickness on the cyclic rumpling of thermally grown oxides

Acta Materialia ◽

10.1016/j.actamat.2005.12.008 ◽

2006 ◽

Vol 54 (7) ◽

pp. 1815-1820 ◽

Author(s):

D.S. Balint ◽

T. Xu ◽

J.W. Hutchinson ◽

A.G. Evans

Keyword(s):

Bond Coat ◽

Thermally Grown Oxides ◽

Thermally Grown

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