Improvement of short-circuit current of InP∕InGaAsP∕InP double heterojunction solar cells

2005 ◽  
Vol 41 (9) ◽  
pp. 557 ◽  
Author(s):  
C.-Y. Kim ◽  
J.-H. Cha ◽  
J. Kim ◽  
Y.-S. Kwon
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Heterojunction Solar Cells ◽  
Double Heterojunction

Increasing short-circuit current in silicon heterojunction solar cells

2011 ◽  
Author(s):  
Zachary Holman ◽  
Antoine Descoeudres ◽  
Loris Barraud ◽  
Johannes Seif ◽  
Fernando Zicarelli ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

scholarly journals Improvement of Short-Circuit Current Density in p-Ni1−xO:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Feng-Hao Hsu ◽  
Na-Fu Wang ◽  
Yu-Zen Tsai ◽  
Ming-Hao Chien ◽  
Mau-Phon Houng
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Window Layer ◽  
Light Transmittance ◽  
Base Layer ◽  
Photoelectric Conversion ◽  
Heterojunction Solar Cells

This study confirms that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-Ni1−xO:Li/n-Si heterojunction solar cells. The results show that the short circuit current density (Jsc) of cell etched at 10 s increases about 8.5% compared to unetched cell, which also corresponds to the increase of efficient photoelectric conversion in NIR region as shown in external quantum efficiency spectra. It is attributed to the increase of light transmittance of AZOY thin films in the NIR region and the effective light path of the NIR wavelength, which results in increasing of light absorption in the base layer.

Modelling the short-circuit current of polymer bulk heterojunction solar cells

2004 ◽  
Vol 451-452 ◽  
pp. 498-502 ◽  
Author(s):  
Wim Geens ◽  
Tom Martens ◽  
Jef Poortmans ◽  
Tom Aernouts ◽  
Jean Manca ◽  
...  
Keyword(s):  
Solar Cells ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells ◽  
Polymer Bulk

SPUTTER-GROWN Sb-DOPED SILICON NANOCRYSTALS EMBEDDED IN SILICON-RICH CARBIDE FOR Si HETEROJUNCTION SOLAR CELLS

2018 ◽  
Vol 25 (03) ◽  
pp. 1850068
Author(s):  
XIAOBO CHEN ◽  
YU TANG ◽  
JIABO HAO
Keyword(s):  
Solar Cells ◽  
Silicon Nanocrystals ◽  
Doping Concentration ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Doped Silicon ◽  
Sb Doping

Sb-doped silicon nanocrystals (Si–NCs) films were fabricated by magnetron co-sputtering combined with rapid-thermal annealing. The effects of Sb content on the structural and electrical properties of the films were studied. The dot size increased with the increasing Sb content, and could be correlated to the effect of Sb-induced crystallization. The variation in the concentration of Sb shows a significant impact on the film properties, where as doped with 0.8[Formula: see text]at.% of Sb exhibited major property improvements when compared with other films. By employing Sb-doped Si–NCs films as emitter layers, Si–NCs/monocrystalline silicon heterojunction solar cells were fabricated and the effect of the Sb doping concentration on the photovoltaic properties was studied. It is found that the doping level in the Si–NCs layer is a key factor in determining the short-circuit current density and power conversion efficiency (PCE). With an optimized doping concentration of 0.8[Formula: see text]at.% of Sb, a maximal PCE of 7.10% was obtained. This study indicates that the Sb-doped Si–NCs can be good candidates for all-silicon tandem solar cells.

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