Design and optimisation of a novel structure capacitive RF MEMS switch to integrate with an antenna to improve its performance parameters

Abstract In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF MEMS) to improve parameters like high actuation voltage and low switching time, by introducing a new fixed - fixed RF MEMS capacitive switch. The proposed switch designed step-by-step evaluation of the plane beam, a novel structure of beam, and deposit the perforations and meanders to reducethe pull-in voltage. All the RF MEMS switch design parameters arestudy using the COMSOL Multiphysics FEM (Finite Element Model) tool. The proposed RF MEMS switch express low pull-in voltageof 4.75V and good return, insertion, and isolation losses in both upstate and downstate conditions are >10dB, below 0.1dB and 60dB, respectively. The dielectric layer as silicon nitride (Si3N4), beam as a gold material. The RLC values are extracted by using lumped model design. The RF MEMS shunt switch (capacitance, inductance, and resistance) of the MEMS bridge are accurately evaluated from the S-parameter analysis. The computational and simulated results are good agreement with each other, which indicates the validity of the proposed switch for K (18-26) GHz band applications.

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Novel Structure of Beam Enhances the Performance of the Shunt Capacitive RF MEMS Switch

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) ◽

10.1109/edssc.2018.8487072 ◽

2018 ◽

Cited By ~ 1

Author(s):

Wentao Xiong ◽

Mei Jiang

Keyword(s):

Rf Mems ◽

Rf Mems Switch ◽

Mems Switch ◽

Novel Structure

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Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

Micro and Nanosystems ◽

10.2174/1876402912999201102200350 ◽

2020 ◽

Vol 12 ◽

Author(s):

Pampa Debnath ◽

Ujjwal Mondal ◽

Arpan Deyasi

Keyword(s):

Transmission Line ◽

Numerical Investigation ◽

Line Width ◽

Insertion Loss ◽

Return Loss ◽

Rf Mems ◽

Rf Mems Switch ◽

Ka Band ◽

Mems Switch ◽

Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

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