Design, Evaluation and Analysis of a Novel H-Shaped Capacitive RF MEMS Switch

2021 ◽  
Author(s):  
Shoukathvali Khan ◽  
K. Srinivasa ◽  
Koushik Guha
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Element Model ◽  
Parameter Analysis ◽  
Design Parameters ◽  
Rf Mems Switch ◽  
Lumped Model ◽  
Mems Switch ◽  
Novel Structure ◽  
Micro Electromechanical System

Abstract In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF MEMS) to improve parameters like high actuation voltage and low switching time, by introducing a new fixed - fixed RF MEMS capacitive switch. The proposed switch designed step-by-step evaluation of the plane beam, a novel structure of beam, and deposit the perforations and meanders to reducethe pull-in voltage. All the RF MEMS switch design parameters arestudy using the COMSOL Multiphysics FEM (Finite Element Model) tool. The proposed RF MEMS switch express low pull-in voltageof 4.75V and good return, insertion, and isolation losses in both upstate and downstate conditions are >10dB, below 0.1dB and 60dB, respectively. The dielectric layer as silicon nitride (Si3N4), beam as a gold material. The RLC values are extracted by using lumped model design. The RF MEMS shunt switch (capacitance, inductance, and resistance) of the MEMS bridge are accurately evaluated from the S-parameter analysis. The computational and simulated results are good agreement with each other, which indicates the validity of the proposed switch for K (18-26) GHz band applications.

scholarly journals Design and Implementation of Stoppers to Capacitive RF MEMS Switch for Low Frequency Applications

2019 ◽  
Vol 8 (4) ◽  
pp. 4260-4265
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Low Frequency ◽  
Parameter Analysis ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
S Parameter ◽  
Fixed Type ◽  
Electromagnetic Behavior ◽  
Rf Performance

This work presents the fixed-fixed type capacitive RF MEMS switch. The device additionally includes nonuniform meanders which can reduce the actuation voltage of the device. The switch accomplishes 0.5-1.5μN of applied force for actuation voltages of 6.9-7.9 V. The simulated and calculated spring steady is 1.49N/m to evaluate the actuation voltage the concept of stoppers is introduced in this work. Incorporating stoppers and meanders to the proposed device is to improve the RF performance. The proposed switch produces perfect electromagnetic behavior low insertion and high isolation with the addition of stoppers at the thickness of 1.2μm for 3μm air gap and aluminum nitride as dielectric layer followed by silicon nitride, silicon dioxide and Kapton polyimide in the device. The switch performance undergoes two conditions here with the addition and without inclusion of the stoppers. The RF Performance of the device with the stoppers, are lower insertion, better return losses and higher isolation are -0.07dB, -82 dB, -69dB at the 8- 8.1GHz frequency having Al3N4 as dielectric film followed by Si3N4 as-0.06dB, -77dB and -71dB then SiO2 as-0.06dB,-87dB, -71dB finally, Kapton polyimide as -0.06dB, -77dB,-76dB at 8- 8.5Ghz frequency. The S-parameter analysis like isolation, return loss and insertion loss are carried using FDTD tool CST which gives good performance.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

A stiff and flat membrane operated DC contact type RF MEMS switch with low actuation voltage

2009 ◽  
Vol 153 (1) ◽  
pp. 114-119 ◽  
Author(s):  
Jongseok Kim ◽  
Sangwook Kwon ◽  
Heemoon Jeong ◽  
Youngtack Hong ◽  
Sanghun Lee ◽  
...  
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Contact Type ◽  
Mems Switch ◽  
Flat Membrane

scholarly journals Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019 ◽  
pp. 43-50
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Design System ◽  
Nsga Ii ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Switch Design ◽  
Design Requirements

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

scholarly journals Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 37
Author(s):  
Kun Deng ◽  
Fuxing Yang ◽  
Yucheng Wang ◽  
Chengqi Lai ◽  
Ke Han
Keyword(s):  
Rf Mems ◽  
Dielectric Material ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Ka Band ◽  
High Capacitance ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Metal Insulator Metal ◽  
State Capacitance

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. To reduce the actuation voltage, a low spring constant bending folding beam and bilateral drop-down electrodes are designed in the MEMS switch. The paper analyzes the switch pull-in model and deduces the elastic coefficient calculation equation, which is consistent with the simulation results. The measured results indicated that, for the proposed MEMS switch with a gap of 2 μm, the insertion loss is better than −0.5 dB and the isolation is more than −20 dB from 25 to 35 GHz with an actuation voltage of 15.8 V. From the fitted results, the up-state capacitance is 6.5 fF, down-state capacitance is 4.3 pF, and capacitance ratios is 162. Compared with traditional MEMS capacitive switches with dielectric material Si3N4, the proposed MEMS switch exhibits high on/off capacitance ratios of 162 and low actuation voltage.

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