Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

2018 ◽  
Vol 11 (4) ◽  
pp. 681-688 ◽  
Author(s):  
Richard Reiner ◽  
Patrick Waltereit ◽  
Beatrix Weiss ◽  
Stefan Moench ◽  
Matthias Wespel ◽  
...  
Keyword(s):  
High Voltage ◽  
Monolithically Integrated ◽  
Power Circuits ◽  
Gan On Si

Monolithically Integrated GaN-on-Si Power Circuits

2017 ◽  
Author(s):  
R. Reiner ◽  
P. Waltereit ◽  
B. Weiss ◽  
S. Moench ◽  
R. Quay ◽  
...  
Keyword(s):  
Monolithically Integrated ◽  
Power Circuits ◽  
Gan On Si

Ultrafast Switching of SiC MOSFETs for High-Voltage Pulsed-Power Circuits

2020 ◽  
Vol 48 (12) ◽  
pp. 4262-4272
Author(s):  
M. Azizi ◽  
J. J. van Oorschot ◽  
T. Huiskamp
Keyword(s):  
High Voltage ◽  
Pulsed Power ◽  
Ultrafast Switching ◽  
Power Circuits

Design of an Integrated SiC JFET Power Switch and Flyback Diode

2012 ◽  
Vol 717-720 ◽  
pp. 1041-1044
Author(s):  
Rahul Radhakrishnan ◽  
Jian Hui Zhao
Keyword(s):  
High Voltage ◽  
Fabrication Process ◽  
Monolithically Integrated ◽  
Surface Field ◽  
Power Switch ◽  
Integrated Device ◽  
D Model

In this paper, we describe the design of a high voltage SiC VJFET monolithically integrated with a JBS diode. The integrated device that was demonstrated up to 834 V in forward blocking doesn’t add any steps to the VJFET fabrication process. While the diode and VJFET share the same surface field termination mechanism, they are partially isolated using implanted field rings. We describe TCAD based optimization of the dimensions of these field rings and outline the design of the JBS diode using a fully analytical 2-D model.

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