Editorial: Recent advances in power semiconductor devices

P.A. Mawby; R.J. Bassett

doi:10.1049/ip-cds:20010444

Editorial: Recent advances in power semiconductor devices

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20010444 ◽

2001 ◽

Vol 148 (2) ◽

pp. 53 ◽

Cited By ~ 1

Author(s):

P.A. Mawby ◽

R.J. Bassett

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Recent Advances

Download Full-text

Recent advances and applications of power electronics and motor drives - Power semiconductor devices

2008 34th Annual Conference of IEEE Industrial Electronics ◽

10.1109/iecon.2008.4757922 ◽

2008 ◽

Author(s):

A. Huang

Keyword(s):

Power Electronics ◽

Semiconductor Devices ◽

Motor Drives ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Recent Advances

Download Full-text

Recent advances in diamond power semiconductor devices

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2018.01.007 ◽

2018 ◽

Vol 78 ◽

pp. 147-156 ◽

Cited By ~ 37

Author(s):

Hitoshi Umezawa

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Recent Advances

Download Full-text

Preface to the Special Issue on ^|^ldquo;Current Technologies and Applications on Power Semiconductor Devices ^|^mdash;Silicon and Wide Bandgap Semiconductors^|^mdash;^|^rdquo;

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.130.911 ◽

2010 ◽

Vol 130 (6) ◽

pp. 911-911

Author(s):

Mutsuhiro Mori

Keyword(s):

Semiconductor Devices ◽

Wide Bandgap ◽

Special Issue ◽

Wide Bandgap Semiconductors ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Bandgap Semiconductors

Download Full-text

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.134.432 ◽

2014 ◽

Vol 134 (6) ◽

pp. 432-433

Author(s):

Masahiro Sato ◽

Akiko Kumada ◽

Kunihiko Hidaka ◽

Keisuke Yamashiro ◽

Yuji Hayase ◽

...

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Introduction: Applications Roadmap of GaN Power Semiconductor Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.139.76 ◽

2019 ◽

Vol 139 (2) ◽

pp. 76-79

Author(s):

Masayoshi YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Laser synthesized silicon carbide power semiconductor devices

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059204 ◽

1998 ◽

Author(s):

Nathaniel R. Quick

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Junction Temperature Control Strategy for Lifetime Extension of Power Semiconductor Devices

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ◽

10.23919/epe20ecceeurope43536.2020.9215718 ◽

2020 ◽

Author(s):

Johannes Ruthardt ◽

Hendrik Schulte ◽

Philipp Ziegler ◽

Manuel Fischer ◽

Maximilian Nitzsche ◽

...

Keyword(s):

Temperature Control ◽

Control Strategy ◽

Semiconductor Devices ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Lifetime Extension

Download Full-text

Fusible Link Technology for Power Semiconductor Devices

10.21236/ada244110 ◽

1991 ◽

Author(s):

Prasad Venkatraman ◽

B. J. Baliga

Keyword(s):

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices

SSRN Electronic Journal ◽

10.2139/ssrn.3427489 ◽

2019 ◽

Author(s):

Kang Wang ◽

Kun Ruan ◽

Wenbo Hu ◽

Shengli Wu ◽

Hongxing Wang

Keyword(s):

High Power ◽

Room Temperature ◽

Semiconductor Devices ◽

Power Semiconductor ◽

Power Semiconductor Devices

Download Full-text

Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360252 ◽

2020 ◽

Author(s):

Nobuo SATOH ◽

Atsushi DOI ◽

Hidekazu YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Scanning Probe Microscope ◽

Scanning Probe ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Probe Microscope

Download Full-text