2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

The Path Forward for GaN Power Devices

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360274 ◽

2020 ◽

Author(s):

Alex Lidow

Keyword(s):

Power Devices

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Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360252 ◽

2020 ◽

Author(s):

Nobuo SATOH ◽

Atsushi DOI ◽

Hidekazu YAMAMOTO

Keyword(s):

Semiconductor Devices ◽

Scanning Probe Microscope ◽

Scanning Probe ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Probe Microscope

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Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360260 ◽

2020 ◽

Author(s):

Zijian Gao ◽

Qing Guo ◽

Na Ren ◽

Kuang Sheng

Keyword(s):

Experimental Investigation ◽

Failure Mechanism ◽

Single Pulse ◽

Power Mosfets

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Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360269 ◽

2020 ◽

Author(s):

Emre Gurpinar ◽

Raj Sahu ◽

Burak Ozpineci ◽

Douglas DeVoto

Keyword(s):

Organic Substrate ◽

High Current ◽

Power Module ◽

Gan Hemt

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Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360259 ◽

2020 ◽

Author(s):

Bingyang Li ◽

Kangping Wang ◽

Hongkeng Zhu ◽

Xu Yang ◽

Laili Wang

Keyword(s):

Cooling Power ◽

Power Module

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Edge Termination Structures for 3.3 kV 4H-SiC Devices

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360283 ◽

2020 ◽

Author(s):

Bi-Fan Dong ◽

Kung-Yen Lee ◽

Yun-Kai Lai ◽

Chen-Dong Tzou ◽

Chih-Chao Hsu ◽

...

Keyword(s):

Edge Termination

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3.3-kV SiC MOSFET Performance and Short-Circuit Capability

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360270 ◽

2020 ◽

Author(s):

Diang Xing ◽

Chen Xie ◽

Ke Wang ◽

Tianshi Liu ◽

Boxue Hu ◽

...

Keyword(s):

Short Circuit

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Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360279 ◽

2020 ◽

Author(s):

N. Boettcher ◽

T. Erlbacher

Keyword(s):

Circuit Breaker ◽

Monolithically Integrated ◽

Design Considerations

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A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360267 ◽

2020 ◽

Author(s):

Fu-Jen Hsu ◽

Chien-Chung Hung ◽

Kuo-Ting Chu ◽

Lurng-Shehng Lee ◽

Chwan-Ying Lee

Keyword(s):

Parasitic Capacitance ◽

Dynamic Switching ◽

Spice Model ◽

Non Linear

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High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia49671.2020.9360271 ◽

2020 ◽

Author(s):

Yu Jie Luo ◽

Indraneel Sanyal ◽

Wei-Chen Tzeng ◽

Yu-Li Ho ◽

Ya-Chun Chang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Cap Layer ◽

Gan On Si

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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The Path Forward for GaN Power Devices

Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices

Edge Termination Structures for 3.3 kV 4H-SiC Devices

3.3-kV SiC MOSFET Performance and Short-Circuit Capability

Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker

A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance

High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The Path Forward for GaN Power Devices

Investigation of power semiconductor devices under applying voltage by multi-purpose scanning probe microscope

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Analysis and Optimization of a Multi-Layer Integrated Organic Substrate for High Current GaN HEMT-Based Power Module

Parasitic Capacitances Characterization of Double-Sided Cooling Power Module Based on GaN Devices

Edge Termination Structures for 3.3 kV 4H-SiC Devices

3.3-kV SiC MOSFET Performance and Short-Circuit Capability

Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker

A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance

High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Latest Publications