scholarly journals Dopant-site dependent properties of nitrogen and boron doped spherical nanodiamond particles from first-principle DFT simulation

2011 ◽  
Vol 55 (1) ◽  
pp. 10402 ◽  
Author(s):  
M. Kavosh Tehrani ◽  
M. Heidari Saani
Keyword(s):  
First Principle ◽  
Dft Simulation ◽  
Boron Doped

Ruthenium decorated boron-doped carbon nanotube for hydrogen storage: A first-principle study

2019 ◽  
Vol 44 (51) ◽  
pp. 27853-27861 ◽  
Author(s):  
Pei Liu ◽  
Jiawei Liang ◽  
Ruihao Xue ◽  
Quanpei Du ◽  
Mingrui Jiang
Keyword(s):  
Carbon Nanotube ◽  
Hydrogen Storage ◽  
First Principle ◽  
Boron Doped

Room-temperature ferromagnetism in boron-doped oxides: a combined first-principle and experimental study

2020 ◽  
Vol 100 (4) ◽  
pp. 141-153 ◽  
Author(s):  
Homnath Luitel ◽  
Sujata Roy ◽  
Mahuya Chakrabarti ◽  
P. Chettri ◽  
A. Tiwari ◽  
...  
Keyword(s):  
Experimental Study ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
First Principle ◽  
Boron Doped

First principle investigations on Boron doped Fe2VAl Heusler alloy

2014 ◽  
Vol 448 ◽  
pp. 237-243 ◽  
Author(s):  
Ch. Venkatesh ◽  
S.K. Srivastava ◽  
V.V. Rao
Keyword(s):  
Heusler Alloy ◽  
First Principle ◽  
Boron Doped

Electronic and transport properties of nitrogen and boron doped zigzag silicon carbide nanoribbons: First principle study

2021 ◽  
pp. 114476
Author(s):  
Satyendra Singh Chauhan ◽  
Premlata Narwariya ◽  
A.K. Srivasatava ◽  
Pankaj Srivastava
Keyword(s):  
Silicon Carbide ◽  
Transport Properties ◽  
First Principle ◽  
Boron Doped

scholarly journals Enhanced electronic and optical responses of nitrogen- or boron-doped BeO monolayer: First principle computation

2021 ◽  
pp. 107102
Author(s):  
Nzar Rauf Abdullah ◽  
Botan Jawdat Abdullah ◽  
Hunar Omar Rshid ◽  
Chi-Shung Tang ◽  
Andrei Manolescu ◽  
...  
Keyword(s):  
First Principle ◽  
Optical Responses ◽  
Boron Doped

scholarly journals Neutral and charged boron-doped fullerenes for CO2 adsorption

2014 ◽  
Vol 5 ◽  
pp. 413-418 ◽  
Author(s):  
Suchitra W de Silva ◽  
Aijun Du ◽  
Wijitha Senadeera ◽  
Yuantong Gu
Keyword(s):  
Density Functional ◽  
Co2 Adsorption ◽  
Weak Interactions ◽  
First Principle ◽  
Neutral State ◽  
Boron Doped ◽  
Doped Fullerenes ◽  
Extra Electron ◽  
And Storage ◽  
Global Emissions

Recently, the capture and storage of CO2 have attracted research interest as a strategy to reduce the global emissions of greenhouse gases. It is crucial to find suitable materials to achieve an efficient CO2 capture. Here we report our study of CO2 adsorption on boron-doped C60 fullerene in the neutral state and in the 1e −-charged state. We use first principle density functional calculations to simulate the CO2 adsorption. The results show that CO2 can form weak interactions with the BC59 cage in its neutral state and the interactions can be enhanced significantly by introducing an extra electron to the system.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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