Modeling of a high performance bandgap graded Pb-free HTM-free perovskite solar cell

2019 ◽  
Vol 87 (1) ◽  
pp. 10101 ◽  
Author(s):  
Davoud Jalalian ◽  
Abbas Ghadimi ◽  
Azadeh Kiani
Keyword(s):  
Solar Cell ◽  
High Performance ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Perovskite Solar Cell ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hole Transport ◽  
Cell Capacitance

In this study, a lead-free nontoxic and hole transport material (HTM)-free perovskite solar cell (PSC) with a novel configuration of glass/FTO/ZnO/CH3NH3SnI3−xBrx/back contact has been modeled and optimized by a solar cell capacitance simulator (SCAPS). The bandgap of CH3NH3SnI3−xBrx absorber is tuned in the range of 1.3 eV to 2.15 eV by variation of the Br doping content. To make a comparison, an optimized Pb-based PSC is also modeled. By optimizing the parameters, power conversion efficiency (PCE) of 16.30%, open circuit voltage (Voc) of 1.02 V, short circuit current density (Jsc) of 22.23 mA/cm2, and fill factor (FF) of 0.72 were obtained. As compare to the reports available in the literature, these results show much improvement and can provide guidelines for production of economic and environmentally friendly PSCs with further efficiency enhancement.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Current Density ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation

2015 ◽  
Vol 761 ◽  
pp. 341-346 ◽  
Author(s):  
Ahmad Aizan Zulkefle ◽  
Maslan Zainon ◽  
Zaihasraf Zakaria ◽  
Mohd Ariff Mat Hanafiah ◽  
Nurul Huda Abdul Razak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cell Modeling ◽  
Modeling Software

This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

scholarly journals The Effect of Annealing Time on TiO2–Based Dye Sensitized Solar Cell: Natural Pigment

2018 ◽  
Vol 6 (6) ◽  
Author(s):  
Hafeez Yusuf Hafeez ◽  
Bala Ismail Adam
Keyword(s):  
Solar Cell ◽  
Annealing Time ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized

In this analytical approach we fabricate and characterized a Titanium Dioxide Dye sensitized solar cell using Doctor-Blade Technique. The samples were given annealing treatment at various time of 20, 30 and 40 minutes respectivelyat constant annealing temperature of 450oC. The device under test (DUT) were tested using a Kiethley 2400, source meter under A.M 1.5 (1000W/m2) illumination from a Newport class A solar simulator.The results shows that at the miscellaneous annealing time, the open circuit voltagesVoc= 0.28V, 0.30V and 0.29V, the short circuit current density Jsc=95.5µAcm-2 , 104.1µAcm-2and 105µAcm-2, the fill factor FF= 0.411, 0.448 and 0.525 and the energy conversion efficiency, η = 0.011, 0.014 and 0.016 respectively.With best results of open circuit voltage Voc=0.30, short circuit current density Jsc= 105mAcm-2, fill factor FF= 0.525 and energy conversion efficiency η= 0.016 was achieved.It was observed that the power density, Fill Factor and efficiency increases with increasewith increase in annealing time.

scholarly journals A High Efficiency Chlorophyll Sensitized Solar Cell with Quasi Solid PVA Based Electrolyte

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
H. C. Hassan ◽  
Z. H. Z. Abidin ◽  
F. I. Chowdhury ◽  
A. K. Arof
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Double Salt ◽  
Sensitized Solar Cells

The objective of this work is to investigate the performance of chlorophyll sensitized solar cells (CSSCs) with gel electrolyte based on polyvinyl alcohol (PVA) with single iodide salt (potassium iodide (KI)) and double salt (KI and tetrapropylammonium iodide (TPAI)). Chlorophyll was extracted from the bryophyteHyophila involuta. The CSSC with electrolyte containing only KI salt produced a short circuit current density (Jsc) of 4.59 mA cm−2, open circuit voltage (Voc) of 0.61 V, fill factor (FF) of 0.64, and efficiency (η) of 1.77%. However, the CSSC with double salt electrolyte exhibitedJscof 5.96 mA cm−2,Vocof 0.58 V, fill factor FF of 0.58, andηof 2.00%. Since CSSC with double salt electrolyte showed better efficiency, other cells fabricated will use the double salt electrolyte. On addition of 0.7 M tetrabutyl pyridine (TBP) to the double salt electrolyte, the cell’s efficiency increased to 2.17%,Jsc=5.37 mA cm−2,Voc=0.55 V, and FF = 0.73. With 5 mM chenodeoxycholic acid (CDCA) added to the chlorophyll, the light to electricity efficiency increased to 2.62% withJscof 8.44 mA cm−2,Vocof 0.54 V, and FF of 0.58.

scholarly journals Role of Vanadium Pentoxide Hole-Extracting Nanolayer in Rubrene/C70-Based Small Molecule Organic Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Zhen Zhan ◽  
Jing Cao ◽  
Weiguang Xie ◽  
Lintao Hou ◽  
Qin Ye ◽  
...  
Keyword(s):  
Solar Cells ◽  
Vanadium Pentoxide ◽  
Organic Solar Cells ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hole Transport ◽  
Heterojunction Solar Cells

Vanadium pentoxideV2O5was inserted between the donor layer and the anode as a hole-extracting nanolayer. Compared with devices without a hole-extracting layer, short-circuit current density (JSC), open-circuit voltage (VOC), fill factor (FF), and power conversion efficiency (PCE) of rubrene/C70-based heterojunction solar cells with 3 nm V2O5nanolayer are enhanced by 99%, 73%, 20%, and 310%, respectively. We found that V2O5interlayer can effectively suppress the contact resistance and increase the hole transport capability. The dependence of the device performance on V2O5layer thickness as well as fill factor on exciton dissociation and charge transport was also investigated in detail.

Devices Fabrication with Narrow-Bandgap a-SiGe:H Alloys Deposited by HWCVD

2004 ◽  
Vol 808 ◽  
Author(s):  
Yueqin Xu ◽  
Baojie Yan ◽  
Brent P. Nelson ◽  
Eugene Iwaniczko ◽  
Robert C. Reedy ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Germanium ◽  
Fill Factor ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Buffer Layers ◽  
Single Junction

ABSTRACTWe incorporate narrow-gap amorphous silicon germanium (a-SiGe:H) alloys grown by hot-wire chemical vapor deposition (HWCVD) into single-junction n-i-p solar cells, and improve both fill factor (FF) and open-circuit voltage (Voc) by bandgap grading. The Tauc bandgap (ET) of the a-SiGe:H is as low as about 1.25 eV. Previously [1], we obtained a short-circuit current density (Jsc) up to 20 mA/cm2 in an n-i-p device incorporating an ungraded 120-nm i-layer of 1.25-eV a-SiGe:H. However, without buffer layers or bandgap profiling, the fill factor was only 38%, likely due to an abrupt bandgap transition and poor hole collection. To overcome these problems, we have used composition bandgap profiling throughout the i-layer and improved both Voc and FF significantly without any Jsc loss. The solar cell efficiency is improved from 3.55% to 5.85% and Voc rises from 0.475 to 0.550 eV. This improved single-junction a-SiGe:H solar cell has a quantum efficiency of about 48% at l=800 nm and about 15% at l=900 nm. We present details of the bandgap profiling and its effect on device performance.

scholarly journals Numerical Modeling and Analysis of HTM-Free Heterojunction Solar Cell Using SCAPS-1D

2021 ◽  
Keyword(s):  
Solar Cell ◽  
Doping Concentration ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Modeling And Analysis ◽  
Model And Simulation ◽  
Absorber Doping ◽  
Cell Capacitance

In this research paper, a HTM-free perovskite solar cell (PSC) structure with Titanium (TiO2), methyl ammonium lead triiodide (CH3NH3PbI3) and platinum (pt) as electron transport material (ETM), photon harvester and metal back contact is proposed. Solar Cell Capacitance Simulator (SCAPS-1D) program was used to implement the model and simulation. Effect of parameters such as thickness of ETM, thickness of absorber, doping concentration of ETM & absorber and electron affinity (EA) of ETM were investigated systematically. From the obtained results, it was found that the parameters affect the performance of the solar cell. When the thickness of ETM was varied from 0.02 to 0.10 μm. The results show that photovoltaic parameters decrease with the thickness increase. When the thickness of the absorber was varied from 0.1 to 1.0 μm, the optimized value was found at thickness of 0.4 . When the doping concentration of absorber and EMT were varied from 1010–1017 cm-3 and from 1015–1020 cm-3, the highest values of PCEs were obtained at 1016 cm-3 and 1020 cm-3 for Absorber and ETM. Also when the EA was varied in the range of 3.7 eV to 4.5 eV, the optimized value was at 3.7 eV. Upon optimization of the above mentioned parameters, power conversion efficiency (PCE) was found to be 25.75 %, short circuit current density (Jsc) 23.25 mAcm-2, open circuit voltage (Voc) 1.24 V and fill factor (FF) 89.50 %. The optimized result shows an improvement of ~1.95 times in PCE, ~1.06 times in Jsc, ~1.44 times in Voc and ~1.28 times in FF as compared to the initial device with the following parameters, PCE=13.22 %, Jsc=21.96 mAcm−2, Voc=0.86 V and FF=69.94 %.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

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