scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

CHARACTERISTICS OF PHOSPHORUS-DOPED AMORPHOUS CARBON FILMS GROWN BY R. F. PLASMA-ENHANCED CVD WITH A NOVEL PHOSPHORUS SOLID TARGET

2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Current Density ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Phosphorus Doped

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.

Influence of Silicon Texturization on the Photovoltaic Properties of CuPc/n-Si Hybrid Solar Cells

2012 ◽  
Vol 531-532 ◽  
pp. 40-44
Author(s):  
Zhi Feng Liu ◽  
Yi Ting Liu
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Hybrid Solar Cell ◽  
Photovoltaic Properties ◽  
Current Voltage

Hybrid solar cell based on copper-phthalocyanine (CuPc) and textured Si has been fabricated. Influence of silicon texturization on the photovoltaic properties of CuPc/n-Si hybrid solar cell was studied by current-voltage characteristic curves in the dark and under illumination conditions. As a result, it is found that textured Si can improve significantly the performance of hybrid solar cell. It exhibits a three times increase in the short-circuit current density with respect to that of the standard hybrid solar cell, and the short-circuit current density reaches up to 5.4 mA/cm2. In addition, the open-voltage and fill factor are almost constant. The solar-energy conversion efficiency is increased by about three times by the textured Si and achieved about 0.8% under “one Sun” illumination. Furthermore, the possible reasons for this result have been discussed.

Design and modeling of an SJ infrared solar cell approaching upper limit of theoretical efficiency

2018 ◽  
Vol 32 (02) ◽  
pp. 1850014 ◽  
Author(s):  
G. S. Sahoo ◽  
G. P. Mishra
Keyword(s):  
Solar Cell ◽  
Quantum Efficiency ◽  
Conversion Efficiency ◽  
Internal Quantum Efficiency ◽  
Spectral Response ◽  
Short Circuit ◽  
Cost Effective ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

Recent trends of photovoltaics account for the conversion efficiency limit making them more cost effective. To achieve this we have to leave the golden era of silicon cell and make a path towards III–V compound semiconductor groups to take advantages like bandgap engineering by alloying these compounds. In this work we have used a low bandgap GaSb material and designed a single junction (SJ) cell with a conversion efficiency of 32.98%. SILVACO ATLAS TCAD simulator has been used to simulate the proposed model using both Ray Tracing and Transfer Matrix Method (under 1 sun and 1000 sun of AM1.5G spectrum). A detailed analyses of photogeneration rate, spectral response, potential developed, external quantum efficiency (EQE), internal quantum efficiency (IQE), short-circuit current density (J[Formula: see text]), open-circuit voltage (V[Formula: see text]), fill factor (FF) and conversion efficiency ([Formula: see text]) are discussed. The obtained results are compared with previously reported SJ solar cell reports.

scholarly journals Study The Current Density-Voltage (J-V) Characteristics of α-Fe2O3 Thin Film Prepared by Spray Pyrolysis Technique

2020 ◽  
Vol 25 (1) ◽  
pp. 1-7
Author(s):  
Mohammed Sami Abd ali ◽  
Ahmed Shaker Hussein ◽  
Hayder Mohammed hadi
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Spray Pyrolysis Technique ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Saturation Current ◽  
Conversion Yield ◽  
Current Voltage

ABSTRACT:   In this work was measured characteristics (current - voltage) for the  (fe2o3 )thin films . The characteristics of the current density-voltage(J-V) were calculated at in both dark and light (100 mw/cm2) conditions. The parameters for this research of the photovoltaic samples, that is, were obtained directly from the curves of the resulting characteristics on the basic variables for the solar cell: the short circuit current density  (Jsc‏  ( ‏ , saturation current (Jo ), open-circuit voltage  (Voc) , fill factor ( FF), and efficiency of solar energy conversion (yield) ƞ ,

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

Effect of Assets of Silicon Film Passivation Layer on the Performance of Silicon Nanowire Solar Cells

2014 ◽  
Vol 633-634 ◽  
pp. 509-512
Author(s):  
Ping Yang ◽  
Xiang Bo Zeng ◽  
Xiao Dong Zhang ◽  
Zhan Guo Wang
Keyword(s):  
Solar Cell ◽  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Silicon Film ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Passivation Layer ◽  
Hydrogen Dilution

Silicon film as a surface passivation layer is reported to reduce surface recombination on silicon nanowires (SiNWs) and thus enable to improve SiNW solar cell (SC) performance. A question yet to be answered regards the link between the silicon film assets and the solar cell performances. We investigated the effect of the properties of silicon films on the SiNWs SC performances by adjusting hydrogen dilution. Our results showed that the open-circuit voltage (Voc) and short-circuit current density (Jsc) of SiNWs SC increase until hydrogen dilution 10 and then decrease. An open-circuit voltage of 0.397 V and short-circuit current density of 18.42 mA/cm2 are achieved at optimized hydrogen dilution. Based on the analysis of silicon film properties we proposed that the increase of defect density with hydrogen dilution was the main cause for the deterioration of SiNWs SC performance.

A Study on Optical and Electrical Properties of Solar Cells of a-Si1-XGeX:H

2011 ◽  
Vol 347-353 ◽  
pp. 3666-3669
Author(s):  
Ming Biao Li ◽  
Li Bin Shi
Keyword(s):  
Solar Cell ◽  
Electrical Properties ◽  
Conversion Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical And Electrical Properties

The AMPS-ID program is used to investigate optical and electrical properties of the solar cell of a-SiC:H/a-Si1-xGex:H/a-Si:H thin films. The short circuit current density, open circuit voltage, fill factor and conversion efficiency of the solar cell are investigated. For x=0.1, the conversion efficiency of the solar cell achieve maximum 9.19 % at the a-Si1-xGex:H thickness of 340 nm.

Influence of Particle Size of TiO2 Powder on the Energy Conversion Efficiency of a Dye-Sensitized Solar Cell

2013 ◽  
Vol 650 ◽  
pp. 39-43
Author(s):  
Nursev Bilgin ◽  
Jongee Park ◽  
Abdullah Ozturk
Keyword(s):  
Energy Conversion ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Dye Sensitized

Dye-sensitized solar cells (DSSCs) have been fabricated using a TiO2 paste composed of mixtures of 25 nm and 250 nm TiO2 particles at various ratios. A maximum energy conversion efficiency of 6.7% has been achieved using the DSSC, based on a TiO2 layer composed of 40 wt% 25 nm and 60 wt% 250 nm TiO2 particles. The short-circuit current density, open-circuit voltage, and filling factor of the cell were 12.95 mA, 0.82 V, and 0.63, respectively. The overall performance of the DSSCs based on TiO2 layers composed using a mixture of two different sized particles is much better than that of either only 25 nm or only 250 nm TiO2 particles. It is recognized that adding the larger particles to the small particles in the TiO2 paste increases the dye absorption and light scattering effects of DSSC, resulting in a higher short-circuit current density and improved energy conversion efficiency.

scholarly journals Ag@SiO2 Core-shell Nanoparticles Embedded in a TiO2 Mesoporous Layer Substantially Improve the Performance of Perovskite Solar Cells

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 701 ◽  
Author(s):  
Bao Wang ◽  
Xiangyu Zhu ◽  
Shuhan Li ◽  
Mengwei Chen ◽  
Haifei Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Sio2 Nanoparticles ◽  
Short Circuit Current Density ◽  
Localized Surface Plasmon ◽  
Optimum Level

In this study, Ag@SiO2 nanoparticles were synthesized by a modified Stöber method for preparing the TiO2 mesoporous layer of carbon counter electrode-based perovskite solar cells (PSCs) without a hole transporting layer. Compared with normal PSCs (without Ag@SiO2 incorporated in the TiO2 mesoporous layer), PSCs with an optimal content of Ag@SiO2 (0.3 wt. % Ag@SiO2-TiO2) show a 19.46% increase in their power conversion efficiency, from 12.23% to 14.61%, which is mainly attributed to the 13.89% enhancement of the short-circuit current density, from 20.23 mA/cm2 to 23.04 mA/cm2. These enhancements mainly contributed to the localized surface Plasmon resonance effect and the strong scattering effect of Ag@SiO2 nanoparticles. However, increasing the Ag@SiO2 concentration in the mesoporous layer past the optimum level cannot further increase the short-circuit current density and incident photon-to-electron conversion efficiency of the devices, which is primarily ascribed to the electron transport pathways being impeded by the insulating silica shells inside the TiO2 network.

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