A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD

2004 ◽  
Vol 26 (3) ◽  
pp. 187-192 ◽  
Author(s):  
M. Losurdo ◽  
M. Giangregorio ◽  
A. Grimaldi ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Silicon Films ◽  
Thin Silicon

Deposition and Growth Mechanism of Low-Temperature Crystalline Silicon Films on Inexpensive Substrates

2009 ◽  
Vol 55 (6(1)) ◽  
pp. 2671-2676 ◽  
Author(s):  
Deyan He ◽  
Min Yin ◽  
Jinxiao Wang ◽  
Pingqi Gao ◽  
Junshuai Li
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Crystalline Silicon ◽  
Silicon Films

Growth mechanism of polycrystalline silicon films from hydrogen-diluted SiCl4 at low temperature

2005 ◽  
Vol 98 (3) ◽  
pp. 034907 ◽  
Author(s):  
Xuanying Lin ◽  
Kuixun Lin ◽  
Chuajun Huang ◽  
Yunpeng Yu ◽  
Yilin Luo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Growth Mechanism ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon
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