A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

Optical methods for the characterization of mechanical properties of thin silicon films

1994 ◽  
Author(s):  
Gilbert M. Tribillon ◽  
Bertrand Trolard ◽  
Patrick Delobelle ◽  
Eric Bonnotte ◽  
Luc Bornier
Keyword(s):  
Mechanical Properties ◽  
Silicon Films ◽  
Optical Methods ◽  
Thin Silicon

Optical characterization of thin silicon films deposited by CVD and annealed by pulsed laser

1982 ◽  
Vol 63 (1-4) ◽  
pp. 169-173
Author(s):  
M. O. Lampert ◽  
J. P. Ponpon ◽  
R. Stuck ◽  
P. Siffert
Keyword(s):  
Pulsed Laser ◽  
Optical Characterization ◽  
Silicon Films ◽  
Thin Silicon

Characterization of thermally annealed thin silicon films on insulators by Raman image measurement

1995 ◽  
Vol 78 (5) ◽  
pp. 3357-3361 ◽  
Author(s):  
Kohji Mizoguchi ◽  
Yuji Yamauchi ◽  
Hiroshi Harima ◽  
Shin‐ichi Nakashima ◽  
Takashi Ipposhi ◽  
...  
Keyword(s):  
Silicon Films ◽  
Image Measurement ◽  
Thin Silicon ◽  
Raman Image

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Surface characterization of thin silicon-rich oxide films

2011 ◽  
Vol 993 (1-3) ◽  
pp. 214-218 ◽  
Author(s):  
D. Ristić ◽  
V. Holý ◽  
M. Ivanda ◽  
M. Marciuš ◽  
M. Buljan ◽  
...  
Keyword(s):  
Surface Characterization ◽  
Oxide Films ◽  
Thin Silicon

Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon
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