TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Disordered Systems

Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 401-404 ◽  
Author(s):  
Julien Pernot ◽  
Sylvie Contreras ◽  
Jean Camassel ◽  
Jean-Louis Robert
Keyword(s):  
Relaxation Time ◽  
Electrical Properties ◽  
Temperature Dependence ◽  
Hall Mobility ◽  
Hole Concentration ◽  
Detailed Comparison ◽  
Time Approximation ◽  
Relaxation Time Approximation ◽  
P Type

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

Hall mobility minimum of temperature dependence in polycrystalline silicon

1998 ◽  
Vol 83 (1) ◽  
pp. 292-296 ◽  
Author(s):  
H. Nussbaumer ◽  
F. P. Baumgartner ◽  
G. Willeke ◽  
E. Bucher
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Polycrystalline Silicon

Temperature dependence of Hall mobility in a single crystal of the organic semiconductor BTQBT

1995 ◽  
Vol 5 (6) ◽  
pp. 861 ◽  
Author(s):  
Kenichi Imaeda ◽  
Yongfang Li ◽  
Yoshiro Yamashita ◽  
Hiroo Inokuchi ◽  
Mizuka Sano
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Organic Semiconductor ◽  
Hall Mobility
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