Hall mobility due to hopping-type conduction in disordered systems

1978 ◽  
Vol 38 (2) ◽  
pp. 173-189 ◽  
Author(s):  
L. Friedman ◽  
M. Pollak
1981 ◽  
Vol 42 (C4) ◽  
pp. C4-99-C4-102
Author(s):  
M. Grünewald ◽  
H. Müller ◽  
P. Thomas ◽  
D. Würtz

2009 ◽  
Vol 6 (1) ◽  
pp. 129-134
Author(s):  
Baghdad Science Journal

Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature


1977 ◽  
Vol 23 (4) ◽  
pp. 227-231 ◽  
Author(s):  
H. Böttger ◽  
V.V. Bryksin

2010 ◽  
Vol 97 (22) ◽  
pp. 222114 ◽  
Author(s):  
N. Ma ◽  
X. Q. Wang ◽  
F. J. Xu ◽  
N. Tang ◽  
B. Shen ◽  
...  

1988 ◽  
Vol 49 (10) ◽  
pp. 1731-1736 ◽  
Author(s):  
M.V. Feigel'man ◽  
V.M. Vinokur

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