OBSERVATION OF PRETRANSITIONAL EFFECTS ON THE SHAPE OF THE E2 (17 cm-1 ) OPTICAL MODE IN β-Ag1 BY RAMAN SPECTROSCOPY

AbstractRaman spectroscopy is used to characterize silicon implanted with arsenic and then annealed. The implant dose ranged from 2 × 1012 to 2 × 1013/cm2. The as-implanted samples show a decreased Raman intensity of the 520 cm−1 optical mode, and increased Raman intensity between 400 and 500 cm−1 with respect to an unimplanted silicon wafer. The higher arsenic doses show an increase in the second-order transverse acoustic-mode (TA) intensity around 300 cm−1 relative to the secondorder transverse optical-mode (TO) intensity near 970 cm−1. Annealing restores the 2TA/2TO relative intensities and sharpens the weak peaks between 600 and 900 cm−1. The Raman spectrum is altered by the lowest dose implant and the annealing steps do not lead to a complete recovery of the pre-implant Raman spectrum. This permits the monitoring of lowdose ion-implant damage recovery with Raman spectroscopy.

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Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy

Physical Review B ◽

10.1103/physrevb.46.4071 ◽

1992 ◽

Vol 46 (7) ◽

pp. 4071-4076 ◽

Cited By ~ 48

Author(s):

R. Hessmer ◽

A. Huber ◽

T. Egeler ◽

M. Haines ◽

G. Tränkle ◽

...

Keyword(s):

Raman Spectroscopy ◽

Phonon Dispersion ◽

Mode Selection ◽

Optical Mode ◽

Selection Rules ◽

Micro Raman Spectroscopy

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Raman Spectroscopy of Ion-Implanted Silicon

MRS Proceedings ◽

10.1557/proc-438-143 ◽

1996 ◽

Vol 438 ◽

Author(s):

David D. Tuschel ◽

James P. Lavine

Keyword(s):

Raman Spectroscopy ◽

Raman Scattering ◽

Second Order ◽

Order Mode ◽

Optical Mode ◽

Phonon Modes ◽

Incident Laser ◽

First Order ◽

Boron Implantation ◽

Scattering Strength

AbstractRaman spectroscopy is used to characterize silicon implanted with boron at a dose of 1014/cm2 or less and thermally annealed. The Raman scattering strengths and band shapes of the first-order optical mode at 520 cm-1 and of the second-order phonon modes are investigated to determine which modes are sensitive to the boron implant. The asimplanted samples show diminishing Raman scattering strength as the boron dose increases when the incident laser beam is 60° with respect to the sample normal. Thermal annealing restores some of the Raman scattering strength. Three excitation wavelengths are used and the shortest, 457.9 nm, yields the greatest spectral differences from unimplanted silicon. The backscattering geometry shows a variety of changes in the Raman spectrum upon boron implantation. These involve band shifts of the first-order optical mode, bandwidth variations of the first-order optical mode, and the intensity of the second-order mode at 620 cm-1.

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Raman Spectroscopy of Ion-Implanted Silicon

MRS Proceedings ◽

10.1557/proc-439-47 ◽

1996 ◽

Vol 439 ◽

Author(s):

David D. Tuschel ◽

James P. Lavine

Keyword(s):

Raman Spectroscopy ◽

Raman Scattering ◽

Second Order ◽

Order Mode ◽

Optical Mode ◽

Phonon Modes ◽

Incident Laser ◽

First Order ◽

Boron Implantation ◽

Scattering Strength

AbstractRaman spectroscopy is used to characterize silicon implanted with boron at a dose of 1014/cm2 or less and thermally annealed. The Raman scattering strengths and band shapes of the first-order optical mode at 520 cm-1 and of the second-order phonon modes are investigated to determine which modes are sensitive to the boron implant. The asimplanted samples show diminishing Raman scattering strength as the boron dose increases when the incident laser beam is 60° with respect to the sample normal. Thermal annealing restores some of the Raman scattering strength. Three excitation wavelengths are used and the shortest, 457.9 nm, yields the greatest spectral differences from unimplanted silicon. The backscattering geometry shows a variety of changes in the Raman spectrum upon boron implantation. These involve band shifts of the first-order optical mode, bandwidth variations of the first-order optical mode, and the intensity of the second-order mode at 620 cm-1.

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Different longitudinal optical—transverse optical mode amplification in tip enhanced Raman spectroscopy of GaAs(001)

Applied Physics Letters ◽

10.1063/1.3532841 ◽

2010 ◽

Vol 97 (26) ◽

pp. 263104 ◽

Cited By ~ 15

Author(s):

Pietro Giuseppe Gucciardi ◽

Jean-Christophe Valmalette

Keyword(s):

Raman Spectroscopy ◽

Longitudinal Optical ◽

Transverse Optical ◽

Optical Mode ◽

Tip Enhanced Raman Spectroscopy

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Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon

MRS Proceedings ◽

10.1557/proc-588-227 ◽

1999 ◽

Vol 588 ◽

Cited By ~ 4

Author(s):

David D. Tuschel ◽

James P. Lavine

Keyword(s):

Raman Spectroscopy ◽

Raman Spectra ◽

Defect Structure ◽

Optical Mode ◽

Micro Raman Spectroscopy ◽

Lattice Damage ◽

Spatially Varying ◽

Raman Characterization ◽

Extensive Damage

AbstractRaman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.

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