Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon
Keyword(s):
AbstractRaman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.
Keyword(s):
Keyword(s):
Structural characterization of thin films formed or changed on materials by micro Raman spectroscopy
1998 ◽
Vol 361
(6-7)
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pp. 619-620
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2007 ◽
Vol 38
(10)
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pp. 1267-1273
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2016 ◽
Vol 91
(1-4)
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pp. 213-225
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2001 ◽
Vol 56
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pp. 915-922
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