SPIN-WAVE SURFACE PARAMETER CHARACTERIZATION OF MAGNETIC THIN FILM INTERFACES

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-325-C5-327
Author(s):  
H. Puszkarski
2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Haiming Yu ◽  
O. d'Allivy Kelly ◽  
V. Cros ◽  
R. Bernard ◽  
P. Bortolotti ◽  
...  

2021 ◽  
Vol 7 (3) ◽  
pp. 43
Author(s):  
Luis M. Álvarez-Prado

We have recently shown that a hybrid magnetic thin film with orthogonal anisotropies presenting weak stripe domains can achieve a high degree of controllability of its ferromagnetic resonance. This work explores the origin of the reconfigurability through micromagnetic simulations. The static domain structures which control the thin film resonance can be found under a deterministic applied field protocol. In contrast to similar systems reported, our effect can be obtained under low magnetic fields. We have also found through simulations that the spin wave propagation in the hybrid is nonreciprocal: two adjacent regions emit antiparallel spin waves along the stripe domains. Both properties convert the hybrid in a candidate for future magnonic devices at the nanoscale.


1998 ◽  
Vol 45 (8) ◽  
pp. 727-732 ◽  
Author(s):  
Yoshifumi Ajishi ◽  
Yoshimitsu Yachi ◽  
Shigeki Chiba ◽  
Hiroshi Osada ◽  
Kyoshiro Seki

Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


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