Clearance and lubricant selection for avoiding seizure in a circumferential groove journal bearing based on a lumped model analysis

Mécanique & Industries ◽

10.1051/meca/2011135 ◽

2011 ◽

Vol 12 (5) ◽

pp. 399-408 ◽

Author(s):

Alex-Florian Cristea ◽

Mircea Pascovici ◽

Michel Fillon

Keyword(s):

Journal Bearing ◽

Model Analysis ◽

Lumped Model ◽

Circumferential Groove ◽

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A Numerical Study of Circumferential Groove Effect on the Thermohydrodynamic Performance of a Journal Bearing

International Journal of Advancements in Computing Technology ◽

10.4156/ijact.vol3.issue10.26 ◽

2011 ◽

Vol 3 (10) ◽

pp. 208-215 ◽

Author(s):

Lin Cai ◽

JinLi Wang ◽

Hongtao Zheng ◽

Yajun Li

Keyword(s):

Journal Bearing ◽

Numerical Study ◽

Circumferential Groove

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Pressure and Temperature Field Measurements of a Lightly Loaded Circumferential Groove Journal Bearing

Tribology Transactions ◽

10.1080/10402004.2011.604758 ◽

2011 ◽

Vol 54 (5) ◽

pp. 806-823 ◽

Author(s):

Alex-Florian Cristea ◽

Jean Bouyer ◽

Michel Fillon ◽

Mircea D. Pascovici

Keyword(s):

Temperature Field ◽

Journal Bearing ◽

Field Measurements ◽

Circumferential Groove

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Lumped Model Analysis of Semiconductor Devices Using the NET-2 Circuit/System Analysis Program

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1972.4326816 ◽

1972 ◽

Vol 19 (6) ◽

pp. 103-107 ◽

Author(s):

J. P. Raymond ◽

M. G. Krebs

Keyword(s):

System Analysis ◽

Semiconductor Devices ◽

Model Analysis ◽

Analysis Program ◽

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The circumferential-groove journal bearing considering cavitation and dynamic stability

Wear ◽

10.1016/0043-1648(69)90110-0 ◽

1969 ◽

Vol 14 (4) ◽

pp. 303

Keyword(s):

Dynamic Stability ◽

Journal Bearing ◽

Circumferential Groove

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Lumped model analysis of the low frequency generation noise in gold-doped silicon junction-gate field-effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(69)90034-3 ◽

1969 ◽

Vol 12 (8) ◽

pp. 605-618 ◽

Author(s):

H.S. Fu ◽

C.T. Sah

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Model Analysis ◽

Lumped Model ◽

Doped Silicon ◽

Frequency Generation

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Lumped-Model Analysis of Microcircuit Vulnerability

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1968.4325057 ◽

1968 ◽

Vol 15 (6) ◽

pp. 271-278 ◽

Author(s):

J. P. Raymond ◽

W. W. Chang ◽

R. E. Budris

Keyword(s):

Model Analysis ◽

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A lumped model analysis of noise in semiconductor devices

IRE Transactions on Electron Devices ◽

10.1109/t-ed.1959.14464 ◽

1959 ◽

Vol 6 (2) ◽

pp. 133-140 ◽

Author(s):

R.N. Beatie

Keyword(s):

Semiconductor Devices ◽

Model Analysis ◽

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Turbulent model analysis and experimental research for lubrication performance of large power units journal bearing

2009 4th IEEE Conference on Industrial Electronics and Applications ◽

10.1109/iciea.2009.5138197 ◽

2009 ◽

Author(s):

Feng Ji ◽

Yong Guo ◽

Xiaoyang Yuan ◽

Ling Yang ◽

Weijun Zhao

Keyword(s):

Experimental Research ◽

Journal Bearing ◽

Model Analysis ◽

Turbulent Model ◽

Large Power ◽

Lubrication Performance

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Numerical Study of Depressurization Rate during Blowdown Based on Lumped Model Analysis

Journal of Nuclear Science and Technology ◽

10.1080/18811248.1984.9731135 ◽

1984 ◽

Vol 21 (12) ◽

pp. 931-941 ◽

Author(s):

Takashi IKEDA ◽

Atsuo YAMANOUCHI ◽

Isao SUMIDA

Keyword(s):

Numerical Study ◽

Model Analysis ◽

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Detailed Lumped-Model Analysis of Transistor Ionizing Radiation Effects

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1996.4324350 ◽

1966 ◽

Vol 13 (6) ◽

pp. 95-104 ◽

Author(s):

James P. Raymond ◽

Robert E. Johnson

Keyword(s):

Ionizing Radiation ◽

Radiation Effects ◽

Model Analysis ◽

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